component
ESD5451X-MS
Public Made by Adomby adom
MSKSEMI Electrostatic And Surge Protection (TVS/ESD), DFN1006-2L. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.
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ESD5451X-MS
MSKSEMI · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L
ESD5451X-MS from MSKSEMI, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Working Voltage | VRWM | 5 | V | TA = 25 °C | 3 | ||
| Breakdown Voltage | VBR | 5.6 | 6.5 | 8.4 | V | IR = 1mA; TA = 25 °C | 3 |
| Reverse Leakage Current | IR | 0.1 | A | VRWM = 5V; TA = 25 °C | 3 | ||
| Clamping Voltage | VC | 6 | V | IPP=1A, tP =8/20µs | 3 | ||
| Clamping Voltage | VC | 10 | V | IPP=8A, tP =8/20µs | 3 | ||
| Junction Capacitance | CJ | 15 | 18 | F | VR = 0V, f = 1 MHz | 3 | |
| Electrostatic Discharge Voltage | VESD | 25 | V | IEC 61000-4-2; Contact Discharge; printed as ±25 V | 3 | ||
| Peak Pulse Power | PPP | 80 | W | tP = 8/20 µs | 3 | ||
| Rated Peak Pulse Current | IPPM | 8 | A | tP = 8/20 µs | 3 | ||
| Ambient Temperature Range | TA | -55 | 125 | ℃ | 3 | ||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 3 |
CAD (KiCad official)
- Symbol:
ESD5451X-MS - Footprint:
Diode_SMD:D_SOD-882 - 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files:
esd5451x-ms-etched.step/esd5451x-ms-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);esd5451x-ms.step/esd5451x-ms.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: MSKSEMI datasheet (6 pp, sha256
be8757c9cfbde8d5, retrieved 2026-10-21, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins, primarycathode-band convention(convention), consensusoff(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# ESD5451X-MS
**MSKSEMI** · Electrostatic And Surge Protection (TVS/ESD) · DFN1006-2L
ESD5451X-MS from MSKSEMI, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint. |
| 2 | A | passive | Anode. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | MSKSEMI |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse Working Voltage | VRWM | | | 5 | V | TA = 25 °C | 3 |
| Breakdown Voltage | VBR | 5.6 | 6.5 | 8.4 | V | IR = 1mA; TA = 25 °C | 3 |
| Reverse Leakage Current | IR | | | 0.1 | A | VRWM = 5V; TA = 25 °C | 3 |
| Clamping Voltage | VC | | | 6 | V | IPP=1A, tP =8/20µs | 3 |
| Clamping Voltage | VC | | | 10 | V | IPP=8A, tP =8/20µs | 3 |
| Junction Capacitance | CJ | | 15 | 18 | F | VR = 0V, f = 1 MHz | 3 |
| Electrostatic Discharge Voltage | VESD | | | 25 | V | IEC 61000-4-2; Contact Discharge; printed as ±25 V | 3 |
| Peak Pulse Power | PPP | | | 80 | W | tP = 8/20 µs | 3 |
| Rated Peak Pulse Current | IPPM | | | 8 | A | tP = 8/20 µs | 3 |
| Ambient Temperature Range | TA | -55 | | 125 | ℃ | | 3 |
| Storage Temperature Range | Tstg | -55 | | 150 | ℃ | | 3 |
## CAD (KiCad official)
- Symbol: `ESD5451X-MS`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `esd5451x-ms-etched.step` / `esd5451x-ms-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `esd5451x-ms.step` / `esd5451x-ms.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [MSKSEMI datasheet](docs/esd5451x-ms-datasheet.pdf) (6 pp, sha256 `be8757c9cfbde8d5`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins`, primary `cathode-band convention` (convention), consensus `off` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/esd5451x-ms-datasheet.pdf)