component

ESD5451NL-2

Public Made by Adom

by adom

WILLSEMI(Will Semicon) ESD Protection Devices, DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttvs-fuse-board level protectionesd5451nl-2factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

ESD5451NL-2

WILLSEMI(Will Semicon) · ESD Protection Devices · DFN1006-2L

ESD5451NL-2 from WILLSEMI(Will Semicon), in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Pin1 passive Bi-directional TVS terminal 1 connected to the protected line (reverse stand-off voltage ±5.0V max, ±15kV contact ESD per IEC61000-4-2); the device is symmetric so either pin may face the line.
2 Pin2 passive Bi-directional TVS terminal 2 connected to the protected line or ground (reverse stand-off voltage ±5.0V max, peak pulse current 4A at 8/20μs); the device is symmetric so polarity is not significant.

Key specifications

Parameter Value
Manufacturer WILLSEMI(Will Semicon)
Package DFN1006-2L
Category TVS/Fuse/Board Level Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse stand-off voltage VRWM -5 5 V 2
Reverse leakage current IR 0.5 µA VRWM = 5V 2
Reverse breakdown voltage VBR 5.2 8 V IBR = 1mA 2
Clamping voltage (TLP) VCL 12 V IPP = 16A, tp = 100ns 2
Clamping voltage (contact discharge) VCL 12 V VESD = 8kV 2
Clamping voltage 8/20μs VCL 7.5 9 V IPP = 1A, tp = 8/20μs 2
Clamping voltage 8/20μs VCL 9.5 11 V IPP = 4A, tp = 8/20μs 2
Dynamic resistance RDYN 0.35 Ω 2
Junction capacitance CJ 11 15 pF VR = 0V, f = 1MHz 2
Peak pulse power Ppk 44 W tp = 8/20μs 2
Peak pulse current IPP 4 A tp = 8/20μs 2
ESD air discharge VESD -20 20 kV IEC61000-4-2 air discharge 2
ESD contact discharge VESD -15 15 kV IEC61000-4-2 contact discharge 2
Junction temperature TJ 125 °C 2
Operating temperature TOP -40 85 °C 2
Lead temperature TL 260 °C 2
Storage temperature TSTG -55 150 °C 2

CAD (KiCad official)

  • Symbol: ESD5451NL-2
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: esd5451nl-2-etched.step / esd5451nl-2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); esd5451nl-2.step / esd5451nl-2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WILLSEMI(Will Semicon) datasheet (6 pp, sha256 456af71cbca3b3f2, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF