# ESD5431N-2

**WILLSEMI(Will Semicon)** · TVS · DFN1006-2L

ESD5431N-2 from WILLSEMI(Will Semicon), in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Pin1 | passive | Pin 1 is one terminal of the bi-directional TVS, which is rated for a reverse stand-off voltage of ±3.3V max and is protected in both directions (Pin2 to Pin1 and Pin1 to Pin2 are both characterized). |
| 2 | Pin2 | passive | Pin 2 is the other terminal of the bi-directional TVS, which is rated for a reverse stand-off voltage of ±3.3V max and is protected in both directions (Pin2 to Pin1 and Pin1 to Pin2 are both characterized). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | WILLSEMI(Will Semicon) |
| Package | DFN1006-2L |
| Category | Circuit Protection |
| Pins | 2 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak pulse power | Ppk |  |  | 100 | W | tp = 8/20μs | 2 |
| Peak pulse current | IPP |  |  | 10 | A | tp = 8/20μs | 2 |
| ESD according to IEC61000-4-2 air discharge | VESD | -30 |  | 30 | kV | IEC61000-4-2 air discharge | 2 |
| ESD according to IEC61000-4-2 contact discharge | VESD | -30 |  | 30 | kV | IEC61000-4-2 contact discharge | 2 |
| Reverse stand-off voltage | VRWM | -3.3 |  | 3.3 | V |  | 3 |
| Reverse leakage current | IR |  | 1 | 100 | nA | VRWM = 3.3V | 3 |
| Junction capacitance | CJ |  | 17.5 | 22 | pF | VR = 0V, f = 1MHz | 3 |
| Junction capacitance | CJ |  | 12.5 | 16 | pF | VR = 3.3V, f = 1MHz | 3 |
| Operating temperature | TOP | -40 |  | 85 | oC |  | 2 |
| Junction temperature | TJ |  |  | 125 | oC |  | 2 |
| Lead temperature | TL |  |  | 260 | oC |  | 2 |
| Storage temperature | TSTG | -55 |  | 150 | oC |  | 2 |
| Reverse breakdown voltage | VBR |  | 3.4 |  | V | IBR = 1mA | 3 |
| Reverse holding voltage | VHOLD |  | 3.4 |  | V | IHOLD = 50mA | 3 |
| Clamping voltage 1) | VCL |  | 8 |  | V | IPP = 16A, tp = 100ns (TLP) | 3 |
| Clamping voltage 2) | VCL |  | 8 |  | V | VESD = 8kV (contact discharge) | 3 |
| Clamping voltage 3) | VCL |  | 6 |  | V | IPP = 1A, tp = 8/20μs | 3 |
| Clamping voltage 3) | VCL |  | 8 |  | V | IPP = 5A, tp = 8/20μs | 3 |
| Clamping voltage 3) | VCL |  | 10 |  | V | IPP = 10A, tp = 8/20μs | 3 |
| Dynamic resistance | RDYN |  | 0.2 |  | Ω | TLP, calculated from 4A to 16A | 3 |

## CAD (KiCad official)

- Symbol: `ESD5431N-2`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: DFN1006-2L (KiCad packages3D, STEP)
- 3D model files: `esd5431n-2-etched.step` / `esd5431n-2-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `esd5431n-2.step` / `esd5431n-2.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [WILLSEMI(Will Semicon) datasheet](docs/esd5431n-2-datasheet.pdf) (7 pp, sha256 `08bb7e55ed958ed3`, retrieved 2026-10-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/esd5431n-2-datasheet.pdf)