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ESD5425E-6

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WILLSEMI(Will Semicon) ESD Protection Devices, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ESD5425E-6

WILLSEMI(Will Semicon) · ESD Protection Devices · SOT-23-6L

ESD5425E-6 from WILLSEMI(Will Semicon), in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 I/O bidirectional Data line I/O protected by the TVS array, rated for ±30kV contact discharge per IEC61000-4-2 and 25A (8/20μs) per IEC61000-4-5 to GND.
2 GND power_in Ground reference pin; the clamping and ESD ratings are specified for any I/O to GND.
3 I/O bidirectional Data line I/O protected by the TVS array, rated for ±30kV contact discharge per IEC61000-4-2 and 25A (8/20μs) per IEC61000-4-5 to GND.
4 I/O bidirectional Data line I/O protected by the TVS array, rated for ±30kV contact discharge per IEC61000-4-2 and 25A (8/20μs) per IEC61000-4-5 to GND.
5 VDD power_in Supply pin of the device; the datasheet specifies VDD floated during the I/O-to-GND junction capacitance test.
6 I/O bidirectional Data line I/O protected by the TVS array, rated for ±30kV contact discharge per IEC61000-4-2 and 25A (8/20μs) per IEC61000-4-5 to GND.

Key specifications

Parameter Value
Manufacturer WILLSEMI(Will Semicon)
Package SOT-23-6L
Category TVS/Fuse/Board Level Protection
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse breakdown voltage VBR 7 8.5 9.5 V IBR = 1mA 3
Forward voltage VF 0.6 0.9 1.2 V IF = 10mA 3
Reverse stand-off voltage VRWM 5 V 3
Reverse leakage current IR 1 uA VRWM = 5V 3
Junction capacitance CI/O - GND CI/O - GND 3 5 pF VR = 0V, f = 1MHz, VDD = floated, any I/O to GND 3
Junction capacitance CI/O - I/O CI/O - I/O 1.5 2.5 pF VR = 0V, f = 1MHz, any I/O to I/O 3
Clamping voltage (TLP) VCL 11.8 V IPP = 16A, tp = 100ns 3
Dynamic resistance (TLP) RDYN 0.12 Ω tp = 100ns 3
Clamping voltage (ESD contact discharge) VCL 12 V VESD = 8kV 3
Clamping voltage (surge) VCL 9.5 V IPP = 1A, tp = 8/20μs 3
Clamping voltage (surge) VCL 14 V IPP = 25A, tp = 8/20μs 3
Dynamic resistance (surge) RDYN 0.19 Ω tp = 8/20μs 3
Peak pulse power Ppk 350 W tp = 8/20μs 2
Peak pulse current IPP 25 A tp = 8/20μs 2
ESD according to IEC61000-4-2 air discharge VESD -30 30 kV IEC61000-4-2 air discharge 2
ESD according to IEC61000-4-2 contact discharge VESD -30 30 kV IEC61000-4-2 contact discharge 2
Junction temperature TJ 125 oC 2
Operation temperature TOP -40 85 oC 2
Storage temperature TSTG -55 150 oC 2
Lead temperature TL 260 oC 2

CAD (KiCad official)

  • Symbol: ESD5425E-6
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: esd5425e-6-etched.step / esd5425e-6-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); esd5425e-6.step / esd5425e-6.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WILLSEMI(Will Semicon) datasheet (7 pp, sha256 2b9cadee663c7958, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF