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ESD5401N-2

Public Made by Adom

by adom

WILLSEMI(Will Semicon) ESD Protection Devices, DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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ESD5401N-2

WILLSEMI(Will Semicon) · ESD Protection Devices · DFN1006-2L

ESD5401N-2 from WILLSEMI(Will Semicon), in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Pin1 passive Pin 1 is one terminal of the uni-directional TVS line, which is rated for 24 V maximum reverse working voltage (VRWM) and 8 A peak pulse current (tp = 8/20µs) across the device.
2 Pin2 passive Pin 2 is the other terminal of the uni-directional TVS line, which is rated for 24 V maximum reverse working voltage (VRWM) and 8 A peak pulse current (tp = 8/20µs) across the device.

Key specifications

Parameter Value
Manufacturer WILLSEMI(Will Semicon)
Package DFN1006-2L
Category TVS/Fuse/Board Level Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
ESD contact discharge (IEC61000-4-2) VESD -30 30 kV ESD according to IEC61000-4-2 contact discharge 2
ESD air discharge (IEC61000-4-2) VESD -30 30 kV ESD according to IEC61000-4-2 air discharge 2
Peak pulse power Ppk 360 W tp = 8/20μs 2
Peak pulse current IPP 8 A tp = 8/20μs 2
Junction temperature TJ 125 oC 2
Operating temperature TOP -40 85 oC 2
Lead temperature TL 260 oC 2
Storage temperature TSTG -55 150 oC 2
Reverse maximum working voltage VRWM 24 V 2
Reverse leakage current IR 1 50 nA VRWM = 24V 2
Reverse breakdown voltage VBR 27 29 33 V IT = 1mA 2
Forward voltage VF 0.65 0.83 1.25 V IF = 20mA 2
Clamping voltage (TLP) VCL 40 V IPP = 16A, tp = 100ns 2
Dynamic resistance (TLP) RDYN 0.6 Ω 2
Clamping voltage (8/20μs) VCL 33 V IPP = 1A, tp = 8/20μs 2
Clamping voltage (8/20μs) VCL 45 V IPP = 8A, tp = 8/20μs 2
Junction capacitance CJ 42 50 pF VR = 0V, f = 1MHz 2
Junction capacitance CJ 12 15 pF VR = 24V, f = 1MHz 2

CAD (KiCad official)

  • Symbol: ESD5401N-2
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: esd5401n-2-etched.step / esd5401n-2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); esd5401n-2.step / esd5401n-2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WILLSEMI(Will Semicon) datasheet (6 pp, sha256 bffc7511cfa19b01, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF