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Contents

README

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ESD5305FB

UMW · ESD And Surge Protection (TVS/ESD) · SOT-23-6

ESD5305FB from UMW, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 I/O1 bidirectional Data line I/O1 is protected by the internal TVS array, rated for ±30kV contact ESD per IEC61000-4-2 and 6A surge (8/20µs) per IEC61000-4-5.
2 VSS power_in Reference (ground) pin for the TVS array; the datasheet specifies CI/O-GND capacitance measured to this pin.
3 I/O2 bidirectional Data line I/O2 is protected by the internal TVS array, rated for ±30kV contact ESD per IEC61000-4-2 and 6A surge (8/20µs) per IEC61000-4-5.
4 I/O3 bidirectional Data line I/O3 is protected by the internal TVS array, rated for ±30kV contact ESD per IEC61000-4-2 and 6A surge (8/20µs) per IEC61000-4-5.
5 VCC power_in Supply pin (called VDD in the electrical characteristics); the datasheet gives I/O-to-GND capacitance of 0.35pF typ. with VDD=5V and reverse stand-off voltage of 5V max.
6 I/O4 bidirectional Data line I/O4 is protected by the internal TVS array, rated for ±30kV contact ESD per IEC61000-4-2 and 6A surge (8/20µs) per IEC61000-4-5.

Key specifications

Parameter Value
Manufacturer UMW
Package SOT-23-6
Category Circuit Protection
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak Pulse Power Ppk 84 W 8/20µs 2
Peak Pulse Current Ipp 6 A 8/20µs 2
ESD according to IEC61000-4-2 air discharge VESD -30 30 kV IEC61000-4-2 air discharge 2
ESD according to IEC61000-4-2 contact discharge VESD -30 30 kV IEC61000-4-2 contact discharge 2
Junction temperature TJ 125 °C 2
Operation temperature TOP -40 85 °C 2
Storage temperature TSTG -55 150 °C 2
Lead temperature TL 260 °C 2
Reverse stand-off voltage VRWM 5 V 3
Reverse leakage current IR 0.6 1 nA VRWM=5V 3
Reverse breakdown voltage VBR 7 8 9 V IBR=1mA 3
Forward voltage VF 0.9 1.2 V IF=10mA 3
Clamping voltage 1) VCL 12.8 V IPP=16A, tp=100ns 3
Dynamic resistance 1) RDYN 0.24 Ω 3
Junction capacitance CI/O-GND CI/O-GND 0.65 pF VR=0V, f=1MHz, VDD=floated, any I/O to GND 3
Junction capacitance CI/O-GND CI/O-GND 0.35 pF VR=0V, f=1MHz, VDD=5V, any I/O to GND 3

CAD (KiCad official)

  • Symbol: ESD5305FB
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: esd5305fb-etched.step / esd5305fb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); esd5305fb.step / esd5305fb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (8 pp, sha256 93ca380d381f70e4, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF