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ESD5305F-6

WILLSEMI Will Semicon · ESD And Surge Protection (TVS/ESD) · SOT-23-6L

ESD5305F-6 from WILLSEMI Will Semicon, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 I/O bidirectional Signal line protected by the steering diodes and TVS, rated for ±30kV contact ESD per IEC61000-4-2 and 6A (8/20µs) surge per IEC61000-4-5, with a 5V maximum reverse stand-off voltage.
2 GND power_in Ground reference for the I/O protection diodes and TVS; I/O-to-GND junction capacitance is specified to this pin (0.65pF typ. with Vcc floated, 0.35pF typ. at Vcc = 5V).
3 I/O bidirectional Signal line protected by the steering diodes and TVS, rated for ±30kV contact ESD per IEC61000-4-2 and 6A (8/20µs) surge per IEC61000-4-5, with a 5V maximum reverse stand-off voltage.
4 I/O bidirectional Signal line protected by the steering diodes and TVS, rated for ±30kV contact ESD per IEC61000-4-2 and 6A (8/20µs) surge per IEC61000-4-5, with a 5V maximum reverse stand-off voltage.
5 Vcc power_in Supply pin for the protection circuit; the datasheet specifies I/O-to-GND capacitance with Vcc = 5V applied versus floated, but gives no Vcc voltage limits.
6 I/O bidirectional Signal line protected by the steering diodes and TVS, rated for ±30kV contact ESD per IEC61000-4-2 and 6A (8/20µs) surge per IEC61000-4-5, with a 5V maximum reverse stand-off voltage.

Key specifications

Parameter Value
Manufacturer WILLSEMI Will Semicon
Package SOT-23-6L
Category Circuit Protection
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak pulse power (tp = 8/20μs) Ppk 84 W tp = 8/20μs 2
Peak pulse current (tp = 8/20μs) IPP 6 A tp = 8/20μs 2
ESD according to IEC61000-4-2 air discharge VESD -30 30 kV IEC61000-4-2 air discharge 2
ESD according to IEC61000-4-2 contact discharge VESD -30 30 kV IEC61000-4-2 contact discharge 2
Junction temperature TJ 125 °C 2
Operating temperature TOP -40 85 °C 2
Lead temperature TL 260 °C 2
Storage temperature TSTG -55 150 °C 2
Reverse stand-off voltage VRWM 5 V 3
Reverse leakage current IR 50 nA VRWM = 5V 3
Reverse breakdown voltage VBR 7 8 9 V IBR = 1mA 3
Forward voltage VF 0.6 0.9 1.2 V IF = 10mA 3
Clamping voltage (TLP) VCL 16.5 V IPP = 16A, tp = 100ns 3
Dynamic resistance (TLP) RDYN 0.45 Ω 3
Clamping voltage (8/20μs) VCL 10 V IPP = 1A, tp = 8/20μs 3
Clamping voltage (8/20μs) VCL 14 V IPP = 6A, tp = 8/20μs 3
Junction capacitance CI/O - GND CI/O - GND 0.65 1 pF VR = 0V, f = 1MHz, Vcc = floated, Any I/O to GND 3
Junction capacitance CI/O - GND CI/O - GND 0.35 0.5 pF VR = 0V, f = 1MHz, Vcc = 5V, Any I/O to GND 3
Junction capacitance CI/O, I/O CI/O, I/O 0.35 0.5 pF VR = 0V, f = 1MHz, Any I/O to I/O 3

CAD (KiCad official)

  • Symbol: ESD5305F-6
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6L (KiCad packages3D, STEP)
  • 3D model files: esd5305f-6-etched.step / esd5305f-6-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); esd5305f-6.step / esd5305f-6.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WILLSEMI Will Semicon datasheet (6 pp, sha256 6808886928ac2961, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF