component

ESD5301N-2

Public Made by Adom

by adom

WILLSEMI Will Semicon ESD And Surge Protection (TVS/ESD), DFN1006-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componentcircuit protectionesd5301n-2factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
esd5301n-2 / README.md
History Download
Ray Publish 0.1.0 49df0f9 16d ago

ESD5301N-2

WILLSEMI Will Semicon · ESD And Surge Protection (TVS/ESD) · DFN1006-2L

ESD5301N-2 from WILLSEMI Will Semicon, in a DFN1006-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Pin1 passive Terminal 1 of the uni-directional ESD line protector, rated for a 5.0 V max reverse working voltage (VRWM) and ±20 kV IEC61000-4-2 contact/air ESD; the datasheet does not state which terminal is anode or cathode in the extracted text.
2 Pin2 passive Terminal 2 of the uni-directional ESD line protector, with 0.40 pF typical junction capacitance (0.65 pF max at VR = 0 V, 1 MHz) and 60 W peak pulse power (8/20 µs) device rating; the datasheet does not state which terminal is anode or cathode in the extracted text.

Key specifications

Parameter Value
Manufacturer WILLSEMI Will Semicon
Package DFN1006-2L
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak pulse power Ppk 60 W tp = 8/20μs 2
Peak pulse current IPP 4 A tp = 8/20μs 2
ESD according to IEC61000-4-2 air discharge VESD -20 20 kV IEC61000-4-2 air discharge 2
ESD according to IEC61000-4-2 contact discharge VESD -20 20 kV IEC61000-4-2 contact discharge 2
Junction temperature TJ 125 °C 2
Operating temperature TOP -40 85 °C 2
Lead temperature TL 260 °C 2
Storage temperature TSTG -55 150 °C 2
Reverse maximum working voltage VRWM 5 V 2
Reverse leakage current IR 100 nA VRWM = 5V 2
Reverse breakdown voltage VBR 7 8 9 V IBR = 1mA 2
Forward voltage VF 0.6 0.9 1.2 V IF = 10mA 2
Junction capacitance CJ 0.4 0.65 pF VR = 0V, f = 1MHz 2
Clamping voltage (TLP) VCL 18 V IPP = 16A, tp = 100ns 2
Dynamic resistance (TLP) RDYN 0.57 Ω 2
Clamping voltage (8/20μs) VCL 11 V IPP = 1A, tp = 8/20μs 2
Clamping voltage (8/20μs) VCL 15 V IPP = 4A, tp = 8/20μs 2

CAD (KiCad official)

  • Symbol: ESD5301N-2
  • Footprint: Diode_SMD:D_SOD-882
  • 3D model: DFN1006-2L (KiCad packages3D, STEP)
  • 3D model files: esd5301n-2-etched.step / esd5301n-2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); esd5301n-2.step / esd5301n-2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: WILLSEMI Will Semicon datasheet (6 pp, sha256 2a78f645a69c37d0, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF