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ESD409

Public Made by Adom

by adom

ElecSuper MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ESD409

ElecSuper · MOSFETs · TO-252

ESD409 from ElecSuper, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the P-channel enhancement MOSFET, with VGS limited to ±20 V per the absolute maximum ratings.
2 Drain passive Drain terminal of the MOSFET, rated for BVDSS of -60 V and continuous drain current of -28 A at TC=25°C.
3 Source passive Source terminal of the MOSFET, serving as the reference for the gate drive.

Key specifications

Parameter Value
Manufacturer ElecSuper
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage BVDSS -60 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID -28 A TC=25°C 2
Continuous Drain Current ID -22 A TC=75°C 2
Maximum Power Dissipation PD 50 W TC=25°C 2
Maximum Power Dissipation PD 30 W TC=75°C 2
Pulsed Drain Current IDM -132 A 2
Avalanche current single pulse IAS -29 A Note a: RG=25Ω, VDD=-60V, VGS=-10V, L=0.3mH, TJ=25℃ 2
Avalanche energy single pulse EAS 136 mJ Note a: RG=25Ω, VDD=-60V, VGS=-10V, L=0.3mH, TJ=25℃ 2
Operating Junction Temperature TJ 150 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Junction-to-Case Thermal Resistance RθJC 1.9 2.5 °C/W Single operation, t≤10s 2
Drain-to-Source Breakdown Voltage BVDSS -60 V VGS=0V, ID=-250uA 3
Zero Gate Voltage Drain Current IDSS -1 uA VDS=-60V, VGS=0V 3
Gate-to-source Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 3
Gate Threshold Voltage VGS(TH) -1.1 -1.6 -2.1 V VGS=VDS, ID=-250uA 3
Drain-to-source On-resistance RDS(on) 27 34 mΩ VGS=-10V, ID=-20A 3
Drain-to-source On-resistance RDS(on) 31 38 mΩ VGS=-4.5V, ID=-20A 3
Body diode Forward Voltage VSD -1.5 V VGS=0V, IS=-1.0A 3
Forward Transconductance gFS 60 S VDS=-5V, ID=-20A 3
Input Capacitance CISS 3020 pF VGS=0V, VDS=-20V, f=1MHz 3
Output Capacitance COSS 180 pF VGS=0V, VDS=-20V, f=1MHz 3
Reverse Transfer Capacitance CRSS 160 pF VGS=0V, VDS=-20V, f=1MHz 3
Total Gate Charge QG(TOT) 46.6 nC VGS=-10V, VDS=-20V, ID=-10A 3
Gate-to-Source Charge QGS 9.1 nC VGS=-10V, VDS=-20V, ID=-10A 3
Gate-to-Drain Charge QGD 6.2 nC VGS=-10V, VDS=-20V, ID=-10A 3
Turn-On Delay Time td(ON) 45 ns VGS=-10V, VDS=-15V, ID=-1A, RG=3Ω 3
Rise Time tr 28 ns VGS=-10V, VDS=-15V, ID=-1A, RG=3Ω 3
Turn-Off Delay Time td(OFF) 80 ns VGS=-10V, VDS=-15V, ID=-1A, RG=3Ω 3
Fall Time tf 6.6 ns VGS=-10V, VDS=-15V, ID=-1A, RG=3Ω 3

CAD (KiCad official)

  • Symbol: ESD409
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: esd409-etched.step / esd409-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); esd409.step / esd409.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ElecSuper datasheet (9 pp, sha256 468888625a542605, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF