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ESD1LIN24DYFRQ1

Public Made by Adom

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Texas Instruments ESD And Surge Protection (TVS/ESD), SOD-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ESD1LIN24DYFRQ1

Texas Instruments · ESD And Surge Protection (TVS/ESD) · SOD-323

ESD1LIN24DYFRQ1 from Texas Instruments, in a SOD-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 IO passive ESD-protected I/O pin of the bidirectional 24-V working-voltage (VRWM ±24 V) clamp, connected to the line being protected (marked (-) on the DYF outline).
2 GND power_in Ground connection for the ESD clamp; connect to ground with a thick, short return trace (marked (+) on the DYF outline).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOD-323
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Breakdown voltage (forward) VBRF 25.5 35.5 V IIO = 10 mA, IO to GND 5
Breakdown voltage (reverse) VBRR -35.5 -25.5 V IIO = -10 mA, IO to GND 5
Reverse stand-off voltage VRWM -24 24 V 5
Leakage current ILEAK -50 1 50 nA VIO = ±24 V, IO to GND 6
Line capacitance CL 2.3 3.8 pF VIO = 0 V, f = 1 MHz, Vpp = 30 mV, IO to GND 6
Input voltage VIN -24 24 V 5
Operating free-air temperature TA -55 150 °C 5
IEC 61000-4-5 peak pulse power PPP 159 W tp - 8/20 µs at 25°C 4
IEC 61000-4-5 peak pulse current IPP 4.3 A tp - 8/20 µs at 25°C 4
Junction temperature TJ -55 150 °C 4
Storage temperature Tstg -65 155 °C 4
Operating free-air temperature (abs max) TA -55 150 °C 4
HBM ESD V(ESD) -2500 2500 V HBM per AEC Q101-001 4
CDM ESD V(ESD) -1000 1000 V CDM per AEC Q101-005 4
IEC 61000-4-2 contact discharge V(ESD) -30000 30000 V all pins 4
IEC 61000-4-2 air-gap discharge V(ESD) -30000 30000 V all pins 4
Junction-to-ambient thermal resistance RθJA 705.4 °C/W DYF (SOD-323) 5
Junction-to-case (top) thermal resistance RθJC(top) 315 °C/W DYF (SOD-323) 5
Junction-to-board thermal resistance RθJB 561.5 °C/W DYF (SOD-323) 5
Junction-to-top characterization parameter ΨJT 145 °C/W DYF (SOD-323) 5
Junction-to-board characterization parameter ΨJB 550.2 °C/W DYF (SOD-323) 5
Clamping voltage (8/20 µs) VCLAMP 37 V IPP = 4.3 A, tp = 8/20 µs, IO to GND and GND to IO 5
Clamping voltage (TLP) VCLAMP 40 V IPP = 16 A, TLP, IO to GND and GND to IO 6
Dynamic resistance RDYN 0.5 Ω 6

CAD (KiCad official)

  • Symbol: ESD1LIN24DYFRQ1
  • Footprint: Diode_SMD:D_SOD-323
  • 3D model: SOD-323 (KiCad packages3D, STEP)
  • 3D model files: esd1lin24dyfrq1-etched.step / esd1lin24dyfrq1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); esd1lin24dyfrq1.step / esd1lin24dyfrq1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (30 pp, sha256 02328795143a6727, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF