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ESD0504TL

Public Made by Adom

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MDD Microdiode Semiconductor ESD And Surge Protection (TVS/ESD), SOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ESD0504TL

MDD Microdiode Semiconductor · ESD And Surge Protection (TVS/ESD) · SOT-26

ESD0504TL from MDD Microdiode Semiconductor, in a SOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 I/O bidirectional Data line I/O pin protected by the TVS array, with a reverse working voltage (VRWM) of 5.0 V, a minimum reverse breakdown voltage of 6.0 V at IT = 1 mA, and a maximum reverse leakage current of 1.0 µA at VRWM = 5 V.
2 GND power_in Ground reference for the protection array; the clamping voltage from any I/O pin to GND is 10 V at IPP = 1 A and 15 V at IPP = 4 A (8/20 µs).
3 I/O bidirectional Data line I/O pin protected by the TVS array, with a reverse working voltage (VRWM) of 5.0 V, a minimum reverse breakdown voltage of 6.0 V at IT = 1 mA, and a maximum reverse leakage current of 1.0 µA at VRWM = 5 V.
4 I/O bidirectional Data line I/O pin protected by the TVS array, with a reverse working voltage (VRWM) of 5.0 V, a minimum reverse breakdown voltage of 6.0 V at IT = 1 mA, and a maximum reverse leakage current of 1.0 µA at VRWM = 5 V.
5 Vcc power_in Vcc supply line protected by the TVS array, with a clamping voltage of 15 V (Vcc pin to GND) at IPP = 8 A, tp = 8/20 µs.
6 I/O bidirectional Data line I/O pin protected by the TVS array, with a reverse working voltage (VRWM) of 5.0 V, a minimum reverse breakdown voltage of 6.0 V at IT = 1 mA, and a maximum reverse leakage current of 1.0 µA at VRWM = 5 V.

Key specifications

Parameter Value
Manufacturer MDD Microdiode Semiconductor
Package SOT-26
Category Circuit Protection
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Breakdown Voltage VBR 6 V IT = 1mA; Any I/O pin to GND 2
Reverse Leakage Current IR 1 uA VRWM = 5V; Any I/O pin to GND 2
Clamping Voltage VC 10 V IPP = 1A, tp = 8/20μs; Any I/O pin to GND 2
Clamping Voltage VC 15 V IPP = 4A, tp = 8/20μs; Any I/O pin to GND 2
Reverse Working Voltage VRWM 5 V 2
Parasitic Capacitance (I/O to I/O) CESD 0.2 0.3 pF VR = 0V, f = 1MHz; Between I/O and I/O 2
Parasitic Capacitance (I/O to GND) CESD 0.45 0.5 pF VR = 0V, f = 1MHz; Between I/O and GND 2
Parasitic Capacitance (Vcc to GND) CESD 0.8 pF VR = 0V, f = 1MHz; Between Vcc and GND 2
ESD per IEC 61000-4-2 (Air) VESD -25 25 KV 1
ESD per IEC 61000-4-2 (Contact) VESD -20 20 KV 1
Peak Pulse Power PPP 60 W 8/20us 1
Operating Temperature TOPT -55 125 °C 1
Lead Solder Temperature (Maximum) TL 260 °C 10 second duration 1
Storage Temperature TSTG -55 150 °C 1

CAD (KiCad official)

  • Symbol: ESD0504TL
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-26 (KiCad packages3D, STEP)
  • 3D model files: esd0504tl-etched.step / esd0504tl-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); esd0504tl.step / esd0504tl.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MDD Microdiode Semiconductor datasheet (5 pp, sha256 41e9380b393129cf, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF