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ESD0504F

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MDD Microdiode Semiconductor ESD And Surge Protection (TVS/ESD), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ESD0504F

MDD Microdiode Semiconductor · ESD And Surge Protection (TVS/ESD) · SOT-363

ESD0504F from MDD Microdiode Semiconductor, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 I/O bidirectional Protected high-speed data line (I/O) with a reverse working voltage of 5.0 V and typical 0.20 pF I/O-to-I/O capacitance, rated for ±25 kV air and ±20 kV contact ESD per the datasheet table.
2 GND power_in Ground reference for the ESD clamps; the datasheet specifies I/O and Vcc clamping voltages measured to this pin.
3 I/O bidirectional Protected high-speed data line (I/O) with a reverse working voltage of 5.0 V and typical 0.20 pF I/O-to-I/O capacitance, rated for ±25 kV air and ±20 kV contact ESD per the datasheet table.
4 I/O bidirectional Protected high-speed data line (I/O) with a reverse working voltage of 5.0 V and typical 0.20 pF I/O-to-I/O capacitance, rated for ±25 kV air and ±20 kV contact ESD per the datasheet table.
5 Vcc power_in Protected Vcc line with a reverse working voltage of 5.0 V and a clamping voltage of 15 V at IPP = 8 A (8/20 µs) to GND.
6 I/O bidirectional Protected high-speed data line (I/O) with a reverse working voltage of 5.0 V and typical 0.20 pF I/O-to-I/O capacitance, rated for ±25 kV air and ±20 kV contact ESD per the datasheet table.

Key specifications

Parameter Value
Manufacturer MDD Microdiode Semiconductor
Package SOT-363
Category Circuit Protection
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Working Voltage VRWM 5 V 2
Reverse Breakdown Voltage VBR 6 V IT = 1mA, Any I/O pin to GND 2
Reverse Leakage Current IR 1 uA VRWM = 5V, Any I/O pin to GND 2
Clamping Voltage VC 10 V IPP = 1A, tp = 8/20μs, Any I/O pin to GND 2
Clamping Voltage VC 15 V IPP = 4A, tp = 8/20μs, Any I/O pin to GND 2
Parasitic Capacitance (I/O to GND) CESD 0.45 0.5 pF VR = 0V, f = 1MHz, between I/O and GND 2
ESD per IEC 61000-4-2 (Air) VESD -25 25 kV 1
ESD per IEC 61000-4-2 (Contact) VESD -20 20 kV 1
Operating Temperature TOPT -55 125 °C 1
Peak Pulse Power (8/20us) PPP 60 W 8/20us pulse 1
Lead Solder Temperature, Maximum TL 260 °C 10 second duration 1
Storage Temperature TSTG -55 150 °C 1
Parasitic Capacitance (I/O to I/O) CESD 0.2 pF VR = 0V, f = 1MHz, between I/O and I/O 2
Parasitic Capacitance (Vcc to GND) CESD 0.8 pF VR = 0V, f = 1MHz, between Vcc and GND 2

CAD (KiCad official)

  • Symbol: ESD0504F
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: esd0504f-etched.step / esd0504f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); esd0504f.step / esd0504f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MDD Microdiode Semiconductor datasheet (5 pp, sha256 331dcec4bbaa1d82, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF