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ES5N10A

Public Made by Adom

by adom

ElecSuper MOSFETs, SOT23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ES5N10A

ElecSuper · MOSFETs · SOT23-3L

ES5N10A from ElecSuper, in a SOT23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the N-channel MOSFET; the datasheet limits gate-source voltage VGS to ±20 V.
2 Source passive Source of the N-channel MOSFET; the datasheet gives no separate pin-level limit, and the device is rated for BVDSS 100 V and ID 2.6 A at TA=25°C.
3 Drain passive Drain of the N-channel MOSFET; the device is rated for BVDSS 100 V and continuous drain current ID 2.6 A at TA=25°C (1.4 W maximum power dissipation).

Key specifications

Parameter Value
Manufacturer ElecSuper
Package SOT23-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage BVDSS 100 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID 2.6 A TA=25°C 2
Continuous Drain Current ID 2 A TA=75°C 2
Maximum Power Dissipation PD 1.4 W 2
Pulsed Drain Current IDM 10.4 A 2
Operating Junction Temperature TJ 150 °C 2
Lead Temperature TL 260 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Junction-to-Ambient Thermal Resistance RθJA 90 °C/W Single operation; device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch 2
Drain-to-Source Breakdown Voltage BVDSS 100 V VGS=0V, ID=250uA 3
Zero Gate Voltage Drain Current IDSS 1 uA VDS=100V, VGS=0V 3
Gate-to-source Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 3
Gate Threshold Voltage VGS(TH) 1 1.65 2.5 V VGS=VDS, ID=250uA 3
Drain-to-source On-resistance RDS(on) 90 135 mΩ VGS=10V, ID=2.5A 3
Drain-to-source On-resistance RDS(on) 120 195 mΩ VGS=4.5V, ID=2A 3
Forward Voltage VSD 0.8 1.5 V VGS=0V, IS=1.0A 3
Input Capacitance CISS 206 pF VGS=0V, f=1MHz, VDS=25V 3
Output Capacitance COSS 29 pF VGS=0V, f=1MHz, VDS=25V 3
Reverse Transfer Capacitance CRSS 1.4 pF VGS=0V, f=1MHz, VDS=25V 3
Total Gate Charge QG(TOT) 4.2 nC VGS=10V, VDS=25V, ID=2.5A 3
Gate-to-Source Charge QGS 1.5 nC VGS=10V, VDS=25V, ID=2.5A 3
Gate-to-Drain Charge QGD 1.1 nC VGS=10V, VDS=25V, ID=2.5A 3
Turn-On Delay Time td(ON) 14.7 ns VGS=10V, VDS=25V, ID=2.5A, RG=2Ω 3
Rise Time tr 3.5 ns VGS=10V, VDS=25V, ID=2.5A, RG=2Ω 3
Turn-Off Delay Time td(OFF) 20.9 ns VGS=10V, VDS=25V, ID=2.5A, RG=2Ω 3
Fall Time tf 2.7 ns VGS=10V, VDS=25V, ID=2.5A, RG=2Ω 3

CAD (KiCad official)

  • Symbol: ES5N10A
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT23-3L (KiCad packages3D, STEP)
  • 3D model files: es5n10a-etched.step / es5n10a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); es5n10a.step / es5n10a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ElecSuper datasheet (6 pp, sha256 a0b12741d95615b1, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF