component
ES3N06G-AB3-R
Public Made by Adomby adom
ElecSuper MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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| es3n06g-ab3-r-etched.glb | 17d ago |
| es3n06g-ab3-r-etched.step | 17d ago |
| es3n06g-ab3-r-hero.glb | 17d ago |
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| README.md | 17d ago |
ES3N06G-AB3-R
ElecSuper · MOSFETs · SOT-89
ES3N06G-AB3-R from ElecSuper, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel MOSFET; the datasheet rates the gate-source voltage VGS at ±20 V. |
| 2 | Drain | passive | Drain of the N-channel MOSFET; the datasheet rates the drain-source voltage BVDSS at 100 V and the continuous drain current at 5 A (TA=25°C). |
| 3 | Source | passive | Source of the N-channel MOSFET; the datasheet references VGS and VDS to this terminal. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ElecSuper |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | BVDSS | 100 | V | 2 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 5 | A | TA=25°C | 2 | ||
| Continuous Drain Current | ID | 3.9 | A | TA=75°C | 2 | ||
| Maximum Power Dissipation | PD | 5.2 | W | 2 | |||
| Pulsed Drain Current | IDM | 20 | A | 2 | |||
| Avalanche Current, Single Pulsed | IAS | 4 | A | Tj=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω (note a) | 2 | ||
| Avalanche Energy, Single Pulsed | EAS | 4 | mJ | Tj=25℃, VDD=50V, VG=10V, L=0.5mH, Rg=25Ω (note a) | 2 | ||
| Operating Junction Temperature | TJ | 150 | °C | 2 | |||
| Lead Temperature | TL | 260 | °C | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 18 | °C/W | Single Operation | 2 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V, ID=250uA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=100V, VGS=0V | 3 | ||
| Gate-to-source Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 3 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 1.65 | 2.5 | V | VGS=VDS, ID=250uA | 3 |
| Drain-to-source On-resistance | RDS(on) | 95 | 135 | mΩ | VGS=10V, ID=2.5A | 3 | |
| Drain-to-source On-resistance | RDS(on) | 125 | 195 | mΩ | VGS=4.5V, ID=2A | 3 | |
| Forward Voltage | VSD | 0.8 | 1.5 | V | VGS=0V, IS=1.0A | 3 |
CAD (KiCad official)
- Symbol:
ES3N06G-AB3-R - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
es3n06g-ab3-r-etched.step/es3n06g-ab3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);es3n06g-ab3-r.step/es3n06g-ab3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ElecSuper datasheet (7 pp, sha256
d8e377e4674de2d0, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).