component
ES3134KQ
Public Made by Adomby adom
ElecSuper MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| es3134kq-etched.glb | 23d ago |
| es3134kq-etched.step | 23d ago |
| es3134kq-hero.glb | 23d ago |
| es3134kq-hero.overlay.json | 23d ago |
| es3134kq.glb | 23d ago |
| es3134kq.kicad_mod | 23d ago |
| es3134kq.kicad_sym | 23d ago |
| es3134kq.lbr | 23d ago |
| es3134kq.step | 23d ago |
| package.json | 23d ago |
| page.json | 23d ago |
| README.md | 23d ago |
ES3134KQ
ElecSuper · MOSFETs · SOT-323
ES3134KQ from ElecSuper, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel enhancement MOSFET, rated for VGS ±12 V (absolute maximum) with gate threshold VGS(TH) of 0.35 V min to 1.1 V max. |
| 2 | Source | passive | Source of the N-channel enhancement MOSFET; the datasheet gives no pin-specific limit, and the device drain-source breakdown voltage BVDSS is 20 V. |
| 3 | Drain | passive | Drain of the N-channel enhancement MOSFET, with continuous drain current ID of 0.88 A at TA=25°C and pulsed drain current IDM of 3.52 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ElecSuper |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | BVDSS | 20 | V | 2 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 2 | ||
| Continuous Drain Current | ID | 0.88 | A | TA=25°C | 2 | ||
| Continuous Drain Current | ID | 0.68 | A | TA=75°C | 2 | ||
| Maximum Power Dissipation | PD | 0.35 | W | 2 | |||
| Pulsed Drain Current | IDM | 3.52 | A | 2 | |||
| Operating Junction Temperature | TJ | 150 | °C | 2 | |||
| Lead Temperature | TL | 260 | °C | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 2 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 357 | °C/W | t ≤ 10s | 2 | ||
| Drain-to-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V, ID=250uA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VDS=20V, VGS=0V | 3 | ||
| Gate-to-source Leakage Current | IGSS | -10 | 10 | uA | VDS=0V, VGS=±10V | 3 | |
| Gate Threshold Voltage | VGS(TH) | 0.35 | 0.75 | 1.1 | V | VGS=VDS, ID=250uA | 3 |
| Drain-to-source On-resistance | RDS(on) | 220 | 300 | mΩ | VGS=4.5V, ID=0.5A | 3 | |
| Drain-to-source On-resistance | RDS(on) | 290 | 400 | mΩ | VGS=2.5V, ID=0.4A | 3 | |
| Drain-to-source On-resistance | RDS(on) | 420 | 700 | mΩ | VGS=1.8V, ID=0.2A | 3 |
CAD (KiCad official)
- Symbol:
ES3134KQ - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
es3134kq-etched.step/es3134kq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);es3134kq.step/es3134kq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ElecSuper datasheet (7 pp, sha256
b6cc2f30fece0f57, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).