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ES2N7002WT1G

Public Made by Adom

by adom

ElecSuper MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ES2N7002WT1G

ElecSuper · MOSFETs · SOT-323

ES2N7002WT1G from ElecSuper, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel enhancement MOSFET; the datasheet limits gate-source voltage VGS to ±20 V.
2 Source passive Source terminal of the N-channel MOSFET; the datasheet gives no pin-specific limit, and the device drain-source breakdown rating is BVDSS 60 V.
3 Drain passive Drain terminal of the N-channel MOSFET; the datasheet gives no pin-specific limit, and the continuous drain current is 0.22 A at TA=25 ℃.

Key specifications

Parameter Value
Manufacturer ElecSuper
Package SOT-323
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage BVDSS 60 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID 0.22 A TA=25℃ 2
Continuous Drain Current ID 0.17 A TA=75℃ 2
Maximum Power Dissipation PD 225 mW 2
Pulsed Drain Current IDM 0.88 A Repetitive rating, tp=10μs, Duty Cycle=1% 2
Operating Junction Temperature TJ 150 °C 2
Lead Temperature TL 260 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Gate-to-source Leakage Current IGSS -10 10 uA VDS=0V, VGS=±20V 3
Gate Threshold Voltage VGS(TH) 0.8 1.5 2.5 V VGS=VDS, ID=250uA 3
Drain-to-Source On-resistance RDS(on) 1.9 3 Ω VGS=10V, ID=0.2A 3
Drain-to-Source On-resistance RDS(on) 2.2 4 Ω VGS=4.5V, ID=0.15A 3
Input Capacitance CISS 30.5 45 pF VGS=0V, f=1MHz, VDS=10V 3
Output Capacitance COSS 5.5 10 pF VGS=0V, f=1MHz, VDS=10V 3
Reverse Transfer Capacitance CRSS 4.1 8 pF VGS=0V, f=1MHz, VDS=10V 3
Total Gate Charge QG(TOT) 1.12 2 nC VGS=10V, VDS=30V, ID=0.2A 3
Gate-to-Source Charge QGS 0.1 0.2 nC VGS=10V, VDS=30V, ID=0.2A 3
Gate-to-Drain Charge QGD 0.23 0.5 nC VGS=10V, VDS=30V, ID=0.2A 3
Turn-On Delay Time td(ON) 3 6 ns VGS=10V, VDS=30V, ID=0.2A, RG=6Ω 3
Rise Time tr 5 10 ns VGS=10V, VDS=30V, ID=0.2A, RG=6Ω 3
Turn-Off Delay Time td(OFF) 14 27 ns VGS=10V, VDS=30V, ID=0.2A, RG=6Ω 3
Fall Time tf 9 17 ns VGS=10V, VDS=30V, ID=0.2A, RG=6Ω 3
Drain-to-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=10mA 3
Zero Gate Voltage Drain Current IDSS 1 uA VDS=60V, VGS=0V, TJ=25℃ 3
Zero Gate Voltage Drain Current IDSS 100 uA VDS=48V, VGS=0V, TJ=125℃ 3
Forward Voltage VSD 1.5 V VGS=0V, IS=1A 3
Junction-to-Ambient Thermal Resistance RθJA 556 °C/W Single operation 2

CAD (KiCad official)

  • Symbol: ES2N7002WT1G
  • Footprint: Package_TO_SOT_SMD:SOT-323_SC-70
  • 3D model: SOT-323 (KiCad packages3D, STEP)
  • 3D model files: es2n7002wt1g-etched.step / es2n7002wt1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); es2n7002wt1g.step / es2n7002wt1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ElecSuper datasheet (7 pp, sha256 75ac2d3cc1f7af04, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF