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ES2N7002SDW1T1G

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ElecSuper MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ES2N7002SDW1T1G

ElecSuper · MOSFETs · SOT-363

ES2N7002SDW1T1G from ElecSuper, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source1 passive Source terminal of the first N-channel MOSFET; the device is rated for BVDSS of 60 V and VGS of ±20 V.
2 Gate1 input Gate of the first N-channel MOSFET; the gate-source voltage is limited to ±20 V.
3 Drain2 passive Drain terminal of the second N-channel MOSFET; drain-source breakdown voltage is 60 V and continuous drain current is 0.3 A at TA=25℃.
4 Source2 passive Source terminal of the second N-channel MOSFET; the device is rated for BVDSS of 60 V and VGS of ±20 V.
5 Gate2 input Gate of the second N-channel MOSFET; the gate-source voltage is limited to ±20 V.
6 Drain1 passive Drain terminal of the first N-channel MOSFET; drain-source breakdown voltage is 60 V and continuous drain current is 0.3 A at TA=25℃.

Key specifications

Parameter Value
Manufacturer ElecSuper
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage BVDSS 60 V 2
Gate-Source Voltage VGS -20 20 V 2
Continuous Drain Current ID 0.3 A TA=25℃ 2
Continuous Drain Current ID 0.2 A TA=100℃ 2
Maximum Power Dissipation PD 350 mW 2
Pulsed Drain Current IDM 1.2 A 2
Operating Junction Temperature TJ 150 °C 2
Lead Temperature TL 260 °C 2
Storage Temperature Range Tstg -55 150 °C 2
Junction-to-Ambient Thermal Resistance RθJA 357 °C/W Single operation 2
Drain-to-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 3
Zero Gate Voltage Drain Current IDSS 1 uA VDS=60V, VGS=0V 3
Gate-to-source Leakage Current IGSS -10 10 uA VDS=0V, VGS=±20V 3
Gate Threshold Voltage VGS(TH) 1 1.6 2 V VGS=VDS, ID=250uA 3
Drain-to-source On-resistance RDS(on) 1.85 2.2 Ω VGS=10V, ID=0.3A 3
Drain-to-source On-resistance RDS(on) 2.05 3 Ω VGS=4.5V, ID=0.2A 3

CAD (KiCad official)

  • Symbol: ES2N7002SDW1T1G
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: es2n7002sdw1t1g-etched.step / es2n7002sdw1t1g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); es2n7002sdw1t1g.step / es2n7002sdw1t1g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ElecSuper datasheet (7 pp, sha256 ee4128ee1a7137d7, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF