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ES2GHE3_A

Public Made by Adom

by adom

Vishay Intertech Fast Recovery / High Efficiency Diodes, SMB(DO-214AA). Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.

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ES2GHE3_A

Vishay Intertech · Fast Recovery / High Efficiency Diodes · SMB(DO-214AA)

ES2GHE3_A from Vishay Intertech, in a SMB(DO-214AA). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint.
2 A passive Anode.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SMB(DO-214AA)
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Maximum repetitive peak reverse voltage (ES2G) VRRM 400 V 1
Working peak reverse voltage (ES2G) VRWM 300 V 1
Maximum RMS voltage (ES2G) VRMS 280 V 1
Maximum average forward rectified current (ES2G) IF(AV) 2 A TL = 110 °C 1
Peak forward surge current (ES2G) IFSM 50 A 8.3 ms single half sine-wave superimposed on rated load 1
Operating junction and storage temperature range TJ, TSTG -55 150 °C 1
Maximum instantaneous forward voltage VF 1.1 V 2.0 A; pulse test 300 µs pulse width, 1 % duty cycle 2
Maximum reverse current at VRRM, TA = 25 °C IR 10 µA at VRRM, TA = 25 °C 2
Maximum reverse current at VRRM, TA = 100 °C IR 200 µA at VRRM, TA = 100 °C 2
Maximum reverse recovery time trr 35 ns IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 2
Maximum reverse recovery time trr 50 ns IF = 1.0 A, dI/dt = 100 A/µs, VR = 30 V, Irr = 0.1 IRM 2
Maximum reverse recovery current IRM 3 A IF = 1.0 A, dI/dt = 100 A/µs, VR = 30 V, Irr = 0.1 IRM 2
Maximum stored charge Qrr 50 nC IF = 1.0 A, dI/dt = 100 A/µs, VR = 30 V, Irr = 0.1 IRM 2
Typical junction capacitance CJ 15 pF 4.0 V, 1 MHz 2
Maximum thermal resistance, junction to ambient RJA 75 °C/W Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas 2
Maximum thermal resistance, junction to lead RJL 25 °C/W Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas 2

CAD (KiCad official)

  • Symbol: ES2GHE3_A
  • Footprint: Diode_SMD:D_SMB
  • 3D model: SMB(DO-214AA) (KiCad packages3D, STEP)
  • 3D model files: es2ghe3-a-etched.step / es2ghe3-a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); es2ghe3-a.step / es2ghe3-a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (5 pp, sha256 9e4d8779606a304d, retrieved 2026-10-14, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins, primary cathode-band convention (convention), consensus off (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF