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ES2C-E3

Public Made by Adom

by adom

Vishay Intertech Fast Recovery / High Efficiency Diodes, DO-214AA. Unpolarised two-terminal part: the datasheet prints no pin numbers, so pins 1 and 2 follow the library convention, KiCad symbol/footprint/3D.

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ES2C-E3

Vishay Intertech · Fast Recovery / High Efficiency Diodes · DO-214AA

ES2C-E3 from Vishay Intertech, in a DO-214AA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint.
2 A passive Anode.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package DO-214AA
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Maximum instantaneous forward voltage VF 0.9 V 2.0 A 2
Maximum DC reverse current at rated DC blocking voltage IR 10 μA At rated DC blocking voltage, TA = 25 °C 2
Maximum DC reverse current at rated DC blocking voltage IR 350 μA At rated DC blocking voltage, TA = 100 °C 2
Max. reverse recovery time trr 20 ns IF = 0.5 A, IR = 1.0 A, lrr = 0.25 A 2
Maximum reverse recovery time trr 30 ns IF = 2.0 A, VR = 30 V, dI/dt = 50 A/μs, Ir = 10 % IRM, TJ = 25 °C 2
Maximum reverse recovery time trr 50 ns IF = 2.0 A, VR = 30 V, dI/dt = 50 A/μs, Ir = 10 % IRM, TJ = 100 °C 2
Maximum stored charge Qrr 10 nC IF = 2.0 A, VR = 30 V, dI/dt = 50 A/μs, Ir = 10 % IRM, TJ = 25 °C 2
Maximum stored charge Qrr 25 nC IF = 2.0 A, VR = 30 V, dI/dt = 50 A/μs, Ir = 10 % IRM, TJ = 100 °C 2
Maximum repetitive peak reverse voltage VRRM 150 V 1
Maximum RMS voltage VRMS 105 V 1
Maximum DC blocking voltage VDC 150 V 1
Maximum average forward rectified current IF(AV) 2 A TL = 110 °C 1
Peak forward surge current IFSM 50 A 8.3 ms single half sine-wave superimposed on rated load 1
Operating junction and storage temperature range TJ, TSTG -55 150 °C 1
Typical thermal resistance, junction to ambient RθJA 75 °C/W Units mounted on PCB 5.0 mm x 5.0 mm land areas 2
Typical thermal resistance, junction to lead RθJL 20 °C/W 2

CAD (KiCad official)

  • Symbol: ES2C-E3
  • Footprint: Diode_SMD:D_SMB
  • 3D model: DO-214AA (KiCad packages3D, STEP)
  • 3D model files: es2c-e3-etched.step / es2c-e3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); es2c-e3.step / es2c-e3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (5 pp, sha256 f2084f4167997536, retrieved 2026-10-14, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins, primary cathode-band convention (convention), consensus off (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF