Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

ES2A-E3

Vishay Intertech · Fast Recovery / High Efficiency Diodes · DO-214AA

ES2A-E3 from Vishay Intertech, in a DO-214AA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode: the banded/marked end per the datasheet; pad 1 of the KiCad diode footprint.
2 A passive Anode.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package DO-214AA
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Maximum repetitive peak reverse voltage VRRM 50 V ES2A column 1
Maximum RMS voltage VRMS 35 V ES2A column 1
Maximum DC blocking voltage VDC 50 V ES2A column 1
Maximum average forward rectified current IF(AV) 2 A at TL = 110 °C 1
Peak forward surge current IFSM 50 A 8.3 ms single half sine-wave superimposed on rated load 1
Operating junction and storage temperature range TJ, TSTG -55 150 °C 1
Maximum instantaneous forward voltage VF 0.9 V 2.0 A; pulse test: 300 ms pulse width, 1 % duty cycle 2
Maximum DC reverse current at rated DC blocking voltage IR 10 µA TA = 25 °C 2
Maximum DC reverse current at rated DC blocking voltage IR 350 µA TA = 100 °C 2
Max. reverse recovery time trr 20 ns IF = 0.5 A, IR = 1.0 A, lrr = 0.25 A 2
Maximum reverse recovery time trr 30 ns IF = 2.0 A, VR = 30 V, dI/dt = 50 A/µs, Ir = 10 % IRM, TJ = 25 °C 2
Maximum reverse recovery time trr 50 ns IF = 2.0 A, VR = 30 V, dI/dt = 50 A/µs, Ir = 10 % IRM, TJ = 100 °C 2
Maximum stored charge Qrr 10 nC IF = 2.0 A, VR = 30 V, dI/dt = 50 A/µs, Ir = 10 % IRM, TJ = 25 °C 2
Maximum stored charge Qrr 25 nC IF = 2.0 A, VR = 30 V, dI/dt = 50 A/µs, Ir = 10 % IRM, TJ = 100 °C 2
Typical thermal resistance, junction to ambient RθJA 75 °C/W Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas 2
Typical thermal resistance, junction to lead RθJL 20 °C/W Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas 2

CAD (KiCad official)

  • Symbol: ES2A-E3
  • Footprint: Diode_SMD:D_SMB
  • 3D model: DO-214AA (KiCad packages3D, STEP)
  • 3D model files: es2a-e3-etched.step / es2a-e3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); es2a-e3.step / es2a-e3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (5 pp, sha256 d9919b029daf60da, retrieved 2026-10-15, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins, primary cathode-band convention (convention), consensus off (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF