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ES1B-R1-00101
Public Made by Adomby adom
PANJIT International Fast Recovery / High Efficiency Diodes, SMA. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownES1B-R1-00101
PANJIT International · Fast Recovery / High Efficiency Diodes · SMA
ES1B-R1-00101 from PANJIT International, in a SMA. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode terminal, identified by the cathode band; for ES1B the maximum recurrent peak reverse voltage is 100 V and the maximum average forward current is 1 A at TL=120°C. |
| 2 | Anode | passive | Anode terminal; for ES1B the peak forward surge current is 30 A (8.3 ms single half sine-wave) and the maximum forward voltage is 0.95 V at 1 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | PANJIT International |
| Package | SMA |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Maximum Recurrent Peak Reverse Voltage | VRRM | 100 | V | 1 | |||
| Maximum RMS Voltage | VRMS | 70 | V | 1 | |||
| Maximum DC Blocking Voltage | VDC | 100 | V | 1 | |||
| Maximum Average Forward Current | IF(AV) | 1 | A | TL=120°C | 1 | ||
| Peak Forward Surge Current | IFSM | 30 | A | 8.3ms single half sine-wave superimposed on rated load | 1 | ||
| Maximum Forward Voltage | VF | 0.95 | V | at 1A | 1 | ||
| Maximum DC Reverse Current at Rated DC Blocking Voltage | IR | 150 | μA | TJ=25°C and TJ=100°C rows printed; single value given, temperature assignment not shown | 1 | ||
| Maximum Reverse Recovery Time | trr | 35 | ns | Note 1: IF=0.5A, IR=1.0A, Irr=0.25A | 1 | ||
| Typical Junction Capacitance | CJ | 7 | pF | Note 2: measured at 1.0MHz and applied reverse voltage of 4.0 V | 1 | ||
| Typical Thermal Resistance, junction to lead | RθJL | 35 | °C/W | Note 3: 8.0mm2 (0.013mm thick) land areas | 1 |
CAD (KiCad official)
- Symbol:
ES1B-R1-00101 - Footprint:
Diode_SMD:D_SMA - 3D model: SMA (KiCad packages3D, STEP)
- 3D model files:
es1b-r1-00101-etched.step/es1b-r1-00101-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);es1b-r1-00101.step/es1b-r1-00101.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: PANJIT International datasheet (5 pp, sha256
5767b46a8b94f637, retrieved 2026-10-15, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).