component
EMG3T2R
Public Made by Adomby adom
ROHM Semicon Digital Transistors, SOT-553-5. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
emg3t2r: specified limits as data (metadata.characteristics, 15 rows from the datasheet)
2 files changed
+210−1
README.md+22@@ -23,6 +23,28 @@ EMG3T2R from ROHM Semicon, in a SOT-553-5. Pinout and pin descriptions extracted | Category | Transistors/Thyristors | | Pins | 5 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-base breakdown voltage | BVCBO | 50 | | | V | IC = 50μA | 2 |+| Collector-emitter breakdown voltage | BVCEO | 50 | | | V | IC = 1mA | 2 |+| Emitter-base breakdown voltage | BVEBO | 5 | | | V | IE = 50μA | 2 |+| Collector cut-off current | ICBO | | | 500 | nA | VCB = 50V | 2 |+| Emitter cut-off current | IEBO | | | 500 | nA | VEB = 4V | 2 |+| Collector-emitter saturation voltage | VCE(sat) | | | 300 | mV | IC = 5mA, IB = 0.25mA | 2 |+| DC current gain | hFE | 100 | 250 | 600 | - | VCE = 5V, IC = 1mA | 2 |+| Input resistance (built-in bias resistor R1) | R1 | 3.29 | 4.7 | 6.11 | kΩ | | 2 |+| Collector-base voltage | VCBO | | | 50 | V | | 2 |+| Collector-emitter voltage | VCEO | | | 50 | V | | 2 |+| Emitter-base voltage | VEBO | | | 5 | V | | 2 |+| Collector current | IC | | | 100 | mA | | 2 |+| Power dissipation (EMG3, total) | PD | | | 150 | mW/Total | *1 each terminal mounted on a reference land; *2 120mW per element must not be exceeded | 2 |+| Junction temperature | Tj | | | 150 | ℃ | | 2 |+| Range of storage temperature | Tstg | -55 | | 150 | ℃ | | 2 |+ ## CAD (KiCad official) - Symbol: `EMG3T2R`
page.json+188−1@@ -163,6 +163,193 @@ "Package": "SOT-553-5", "Category": "Transistors/Thyristors", "Pins": "5"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "5e314068211c697c",+ "rows": [+ {+ "name": "Collector-base breakdown voltage",+ "symbol": "BVCBO",+ "kind": "electrical",+ "unit": "V",+ "min": 50,+ "typ": null,+ "max": null,+ "conditions": "IC = 50μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter breakdown voltage",+ "symbol": "BVCEO",+ "kind": "electrical",+ "unit": "V",+ "min": 50,+ "typ": null,+ "max": null,+ "conditions": "IC = 1mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter-base breakdown voltage",+ "symbol": "BVEBO",+ "kind": "electrical",+ "unit": "V",+ "min": 5,+ "typ": null,+ "max": null,+ "conditions": "IE = 50μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector cut-off current",+ "symbol": "ICBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 500,+ "conditions": "VCB = 50V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter cut-off current",+ "symbol": "IEBO",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 500,+ "conditions": "VEB = 4V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter saturation voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "mV",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "IC = 5mA, IB = 0.25mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "DC current gain",+ "symbol": "hFE",+ "kind": "electrical",+ "unit": "-",+ "min": 100,+ "typ": 250,+ "max": 600,+ "conditions": "VCE = 5V, IC = 1mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input resistance (built-in bias resistor R1)",+ "symbol": "R1",+ "kind": "electrical",+ "unit": "kΩ",+ "min": 3.29,+ "typ": 4.7,+ "max": 6.11,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-base voltage",+ "symbol": "VCBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter voltage",+ "symbol": "VCEO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Emitter-base voltage",+ "symbol": "VEBO",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector current",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation (EMG3, total)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "mW/Total",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "*1 each terminal mounted on a reference land; *2 120mW per element must not be exceeded",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction temperature",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": null,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Range of storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -204,4 +391,4 @@ "visibility": { "public": true }-}+}