component

EMG3T2R

Public Made by Adom

by adom

ROHM Semicon Digital Transistors, SOT-553-5. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsemg3t2rfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

EMG3T2R

ROHM Semicon · Digital Transistors · SOT-553-5

EMG3T2R from ROHM Semicon, in a SOT-553-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B1 input DTr1 base input, connected through the internal 4.7kΩ R1 (DTC143T) to the DTr1 transistor base; VEBO max 5V.
2 E passive Common emitter of DTr1 and DTr2, typically tied to ground; emitter-base breakdown BVEBO min 5V.
3 B2 input DTr2 base input, connected through the internal 4.7kΩ R1 to the DTr2 transistor base; VEBO max 5V.
4 C2 passive DTr2 collector output; VCEO 50V max, IC 100mA max.
5 C1 passive DTr1 collector output; VCEO 50V max, IC 100mA max.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-553-5
Category Transistors/Thyristors
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage BVCBO 50 V IC = 50μA 2
Collector-emitter breakdown voltage BVCEO 50 V IC = 1mA 2
Emitter-base breakdown voltage BVEBO 5 V IE = 50μA 2
Collector cut-off current ICBO 500 nA VCB = 50V 2
Emitter cut-off current IEBO 500 nA VEB = 4V 2
Collector-emitter saturation voltage VCE(sat) 300 mV IC = 5mA, IB = 0.25mA 2
DC current gain hFE 100 250 600 - VCE = 5V, IC = 1mA 2
Input resistance (built-in bias resistor R1) R1 3.29 4.7 6.11 kΩ 2
Collector-base voltage VCBO 50 V 2
Collector-emitter voltage VCEO 50 V 2
Emitter-base voltage VEBO 5 V 2
Collector current IC 100 mA 2
Power dissipation (EMG3, total) PD 150 mW/Total *1 each terminal mounted on a reference land; *2 120mW per element must not be exceeded 2
Junction temperature Tj 150 ℃ 2
Range of storage temperature Tstg -55 150 ℃ 2

CAD (KiCad official)

  • Symbol: EMG3T2R
  • Footprint: Package_TO_SOT_SMD:SOT-553
  • 3D model: SOT-553-5 (KiCad packages3D, STEP)
  • 3D model files: emg3t2r-etched.step / emg3t2r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); emg3t2r.step / emg3t2r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (9 pp, sha256 5e314068211c697c, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF