component
EMF30N02J-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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EMF30N02J-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
EMF30N02J-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated at ±12 V maximum and a threshold of 0.45 V min to 1.0 V max at ID = 250 µA. |
| 2 | S | passive | Source; the body diode runs from source to drain, with a continuous source-drain diode current of 1.75 A at TC = 25 °C. |
| 3 | D | passive | Drain; drain-source voltage is rated at 20 V maximum, with pulsed drain current of 20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
EMF30N02J-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
emf30n02j-vb-etched.step/emf30n02j-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);emf30n02j-vb.step/emf30n02j-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
94fc8ff81a14c7fc, retrieved 2026-11-02, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).