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EMB09P03A-VB

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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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EMB09P03A-VB

VBsemi Elec · MOSFETs · TO-252

EMB09P03A-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, threshold VGS(th) -1 V to -3 V at ID = -250 µA.
2 D passive Drain (center pin, also the tab); VDS rated -30 V, continuous drain current -70 A at TC = 25 °C (package limited), pulsed -240 A.
3 S passive Source; continuous body-diode current -70 A and pulsed -240 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -70 A TJ = 175 °C, TC = 25 °C 1
Continuous Drain Current ID -58 A TJ = 175 °C, TC = 125 °C 1
Pulsed Drain Current IDM -240 A 1
Avalanche Current IAR -60 A 1
Repetitive Avalanche Energy EAR 180 mJ L = 0.1 mH 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Gate Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = -250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Forward Voltage VSD -1.2 -1.5 V IF = -75 A, VGS = 0 V 2
Total Gate Charge Qg 160 240 nC VDS = -15 V, VGS = -10 V, ID = -75 A 2
Turn-On Delay Time td(on) 25 40 ns VDD = -15 V, RL = 0.2, ID - 75 A, VGEN = -10 V, Rg = 2.5 2
Rise Time tr 225 360 ns VDD = -15 V, RL = 0.2, ID - 75 A, VGEN = -10 V, Rg = 2.5 2
Turn-Off Delay Time td(off) 150 240 ns VDD = -15 V, RL = 0.2, ID - 75 A, VGEN = -10 V, Rg = 2.5 2
Fall Time tf 210 340 ns VDD = -15 V, RL = 0.2, ID - 75 A, VGEN = -10 V, Rg = 2.5 2
Reverse Recovery Time trr 55 100 ns IF = -75 A, dI/dt = 100 A/µs 2
Peak Reverse Recovery Current IRM(REC) 2.5 5 A IF = -75 A, dI/dt = 100 A/µs 2
Reverse Recovery Charge Qrr 0.07 0.25 µC IF = -75 A, dI/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: EMB09P03A-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: emb09p03a-vb-etched.step / emb09p03a-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); emb09p03a-vb.step / emb09p03a-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 c3cfdc8c942fd3de, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF