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EM6K6T2R

Public Made by Adom

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ROHM Semicon MOSFETs, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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EM6K6T2R

ROHM Semicon · MOSFETs · SOT-563

EM6K6T2R from ROHM Semicon, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of Tr1 (Nch MOSFET 1), with ESD protection diode; VDSS 20V, ID ±300mA.
2 G1 input Gate of Tr1; gate-source voltage limit ±8V, 1.8V drive capable.
3 D2 passive Drain of Tr2 (Nch MOSFET 2); VDSS 20V, ID ±300mA, pulsed ±600mA.
4 S2 passive Source of Tr2, with body diode; independent of Tr1.
5 G2 input Gate of Tr2; gate-source voltage limit ±8V, 1.8V drive capable.
6 D1 passive Drain of Tr1 (Nch MOSFET 1); VDSS 20V, ID ±300mA, pulsed ±600mA.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-563
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain - Source voltage VDSS 20 V 1
Continuous drain current ID -300 300 mA 1
Pulsed drain current IDP -600 600 mA Pw ≤ 10μs, Duty cycle ≤ 1% 1
Gate - Source voltage VGSS -8 8 V 1
Power dissipation, total PD 150 mW Each terminal mounted on a reference footprint 1
Power dissipation, element PD 120 mW 1
Junction temperature Tj 150 ℃ 1
Operating junction and storage temperature range Tstg -55 150 ℃ 1
Thermal resistance, junction - ambient, total RthJA 833 ℃/W Each terminal mounted on a reference footprint 2
Thermal resistance, junction - ambient, element RthJA 1042 ℃/W 2
Drain - Source breakdown voltage V(BR)DSS 20 V VGS = 0V, ID = 1mA 2
Zero gate voltage drain current IDSS 1 μA VDS = 20V, VGS = 0V 2
Gate - Source leakage current IGSS -10 10 μA VDS = 0V, VGS = ±8V 2
Gate threshold voltage VGS(th) 0.3 1 V VDS = 10V, ID = 1mA 2
Static drain - source on - state resistance (VGS = 4.0V) RDS(on) 0.7 1 Ω VGS = 4.0V, ID = 300mA; pulsed 2
Static drain - source on - state resistance (VGS = 2.5V) RDS(on) 0.8 1.2 Ω VGS = 2.5V, ID = 300mA; pulsed 2
Static drain - source on - state resistance (VGS = 1.8V) RDS(on) 1 1.4 Ω VGS = 1.8V, ID = 300mA; pulsed 2
Forward transfer admittance /Yfs/ 400 mS VDS = 10V, ID = 300mA; pulsed 2
Forward voltage (body diode) VSD 1.2 V VGS = 0V, IS = 100mA; pulsed 3
Breakdown voltage temperature coefficient ΔV(BR)DSS 29 mV/℃ ID = 1mA, ΔTj referenced to 25℃ 2
Gate threshold voltage temperature coefficient ΔVGS(th) -1.6 mV/℃ ID = 1mA, ΔTj referenced to 25℃ 2
Input capacitance Ciss 25 pF VGS = 0V 3
Output capacitance Coss 10 pF VDS = 10V 3
Reverse transfer capacitance Crss 10 pF f = 1MHz 3
Turn - on delay time td(on) 5 ns VDD ⋍ 10V, VGS = 4.0V; pulsed 3
Rise time tr 10 ns ID = 150mA; pulsed 3
Turn - off delay time td(off) 15 ns RL = 67Ω; pulsed 3
Fall time tf 10 ns RG = 10Ω; pulsed 3

CAD (KiCad official)

  • Symbol: EM6K6T2R
  • Footprint: Package_TO_SOT_SMD:SOT-563
  • 3D model: SOT-563 (KiCad packages3D, STEP)
  • 3D model files: em6k6t2r-etched.step / em6k6t2r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); em6k6t2r.step / em6k6t2r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (12 pp, sha256 7b68bcad5f526ca4, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF