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EL814

Everlight Elec · Transistor, Photovoltaic Output Optoisolators · DIP-4

EL814 from Everlight Elec, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Anode / Cathode input One terminal of the two infrared emitting diodes connected in inverse parallel, which the datasheet rates at a forward current of ±60 mA (peak 1 A for 10 µs).
2 Cathode / Anode input The other terminal of the inverse-parallel infrared emitting diode pair, rated with the same ±60 mA forward current limit (peak 1 A for 10 µs).
3 Emitter passive Emitter of the optically coupled phototransistor output, with an emitter-collector breakdown voltage (VECO) rating of 6 V.
4 Collector passive Collector of the optically coupled phototransistor output, with a collector-emitter voltage (VCEO) rating of 80 V and a collector power dissipation of 150 mW.

Key specifications

Parameter Value
Manufacturer Everlight Elec
Package DIP-4
Category Optoisolators
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Forward voltage VF 1.2 1.4 V IF = ± 20mA 3
Input capacitance Cin 50 250 pF V = 0, f = 1KHz 3
Collector-Emitter dark current ICEO 100 nA VCE = 20V, IF = 0mA 3
Collector-Emitter breakdown voltage BVCEO 80 V IC = 0.1mA 3
Emitter-Collector breakdown voltage BVECO 6 V IE = 0.1mA 3
Current transfer ratio (EL814) CTR 20 300 % IF = ±1mA, VCE = 5V 3
CTR symmetry 0.7 1.3 IF = ±1mA, VCE = 5V 3
Collector-emitter saturation voltage VCE(sat) 0.05 0.2 V IF = ±20mA, Ic = 1mA 3
Floating capacitance CIO 0.6 1 pF VIO = 0, f = 1MHz 3
Rise time Tr 18 µs VCE = 2V, IC = 2mA, RL = 100 3
Fall time Tf 18 µs VCE = 2V, IC = 2mA, RL = 100 3
Forward current IF -60 60 mA 2
Peak forward current IFM 1 A t = 10µs 2
Input power dissipation PD 100 mW 2
Output power dissipation PC 150 mW 2
Collector-Emitter voltage VCEO 80 V 2
Emitter-Collector voltage VECO 6 V 2
Total power dissipation PTOT 200 mW 2
Isolation voltage VISO 5000 V rms AC for 1 minute, R.H. = 40~60% R.H.; pins 1,2 shorted and pins 3,4 shorted 2
Operating temperature TOPR -55 110 °C 2
Storage temperature TSTG -55 125 °C 2
Soldering temperature TSOL 260 °C For 10 seconds 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC 1.1 (A) Maximum Body Case Temperature Profile for evaluation of Reflow Profile Notes Reference: IPC/JEDEC J-STD-020D 12

CAD (KiCad official)

  • Symbol: EL814
  • Footprint: Package_DIP:DIP-4_W7.62mm
  • 3D model: DIP-4 (KiCad packages3D, STEP)
  • 3D model files: el814-etched.step / el814-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); el814.step / el814.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Everlight Elec datasheet (13 pp, sha256 5a3e049befbbaf5f, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF