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EG3112

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EG Micro Gate Drivers, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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EG3112

EG Micro · Gate Drivers · SOIC-8

EG3112 from EG Micro, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Vcc power_in Low-side supply input with an operating range of 2.8V to 20V; a high-frequency 0.1uF bypass capacitor is recommended to reduce high-frequency noise at this pin.
2 HIN input Logic input controlling the high-side output HO, active high (1 turns the high-side MOSFET on, 0 turns it off), with logic high at 2.5V minimum, logic low at 1.0V maximum, and an internal 200K pull-down.
3 LIN input Logic input controlling the low-side output LO, active high (1 turns the low-side MOSFET on, 0 turns it off), with logic high at 2.5V minimum, logic low at 1.0V maximum, and an internal 200K pull-down.
4 GND power_in Ground reference pin for the chip.
5 LO output Low-side gate driver output that controls the on/off state of the low-side power MOSFET.
6 VS power_in High-side floating ground pin; the absolute maximum range is VB-20V to VB+0.3V.
7 HO output High-side gate driver output that controls the on/off state of the high-side power MOSFET; the absolute maximum range is VS-0.3V to VB+0.3V.
8 VB power_in High-side floating supply pin for the bootstrap supply, with an absolute maximum rating of 600V.

Key specifications

Parameter Value
Manufacturer EG Micro
Package SOIC-8
Category Motor Driver ICs
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
电源 Vcc (supply voltage) Vcc 2.8 12 20 V 8
静态电流 (quiescent current) Icc 5 uA 输入悬空，Vcc=12V 8
输入逻辑信号高电位 Vin(H) 2.5 V 所有输入控制信号 8
输入逻辑信号低电位 Vin(L) -0.3 0 1 V 所有输入控制信号 8
输入逻辑信号高电平的电流 Iin(H) 20 uA Vin=5V 8
输入逻辑信号低电平的电流 Iin(L) -20 uA Vin=0V 8
低端输出 LO 开延时 Ton 280 400 nS 见图 7-1 8
低端输出 LO 关延时 Toff 125 300 nS 见图 7-1 8
低端输出 LO 上升时间 Tr 120 200 nS 见图 7-1 8
低端输出 LO 下降时间 Tf 80 100 nS 见图 7-1 8
高端输出 HO 开延时 Ton 250 400 nS 见图 7-2 8
高端输出 HO 关延时 Toff 180 400 nS 见图 7-2 8
高端输出 HO 上升时间 Tr 120 200 nS 见图 7-2 8
高端输出 HO 下降时间 Tf 80 100 nS 见图 7-2 8
死区时间 DT 50 100 300 nS 见图 7-3，无负载电容 CL=0 8
IO 输出拉电流 IO+ 1.8 2 A Vo=0V,VIN=VIH PW≤10uS 8
IO 输出灌电流 IO- 2 2.5 A Vo=12V,VIN=VIL PW≤10uS 8
自举高端 VB 电源 VB -0.3 600 V TA=25℃ unless noted 7
低端输出 LO LO -0.3 V TA=25℃ unless noted; max printed as VCC+0.3 7
电源 VCC VCC -0.3 20 V TA=25℃ unless noted 7
高通道逻辑信号输入电平 HIN -0.3 V TA=25℃ unless noted; max printed as VCC+0.3 7
低通道逻辑信号输入电平 LIN -0.3 V TA=25℃ unless noted; max printed as VCC+0.3 7
TA 环境温度 TA -45 125 ℃ 7
Tstr 储存温度 Tstr -55 150 ℃ 7
TL 焊接温度 TL 300 ℃ T=10S 7
推荐电源 Vcc (高压开启 MOS 管) VCC 10 15 V 高压开启 MOS 管推荐 10
推荐电源 Vcc (低压开启 MOS 管) VCC 2.8 10 V 低压开启 MOS 管推荐 10

CAD (KiCad official)

  • Symbol: EG3112
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: eg3112-etched.step / eg3112-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); eg3112.step / eg3112.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: EG Micro datasheet (12 pp, sha256 ff1a7a64833bedb1, retrieved 2026-10-18, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF