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EG1160

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EG Micro Gate Drivers, SOP-16. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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EG1160

EG Micro · Gate Drivers · SOP-16

EG1160 from EG Micro, in a SOP-16. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 REF5V output Provides a 5V reference output that can source 20 mA; a high-frequency bypass capacitor (1 uF ceramic suggested) should be placed close to this pin.
2 HIN input High-side logic input, active high: logic 1 turns the high-side MOSFET on (HO high) and logic 0 turns it off; logic levels are 2.5 V minimum high and 1.0 V maximum low, with an internal 200K pull-down.
3 SD input Shutdown input: a high level disables the PWM outputs and a low level allows PWM output.
4 LIN input Low-side logic input, active high: logic 1 turns the low-side MOSFET on (LO high) and logic 0 turns it off; logic levels are 2.5 V minimum high and 1.0 V maximum low, with an internal 200K pull-down.
5 VSS power_in Chip signal (analog) ground for the control circuitry, to be connected close to COM.
6 INP input Non-inverting input of the internal op-amp; input voltage range is -0.3 V to 5.3 V.
7 INN input Inverting input of the internal op-amp; input voltage range is -0.3 V to 5.3 V.
8 AMPO output Output of the internal op-amp, swinging from 0 V to REF5V with at least 10 mA output drive capability.
9 SDLIN input Low-side MOSFET current comparator input, referenced to COM, with a 160-200 mV (180 mV typical) trip threshold for cycle-by-cycle overcurrent protection.
10 LO output Drives the gate of the low-side power MOSFET; source current 2 A typ./1.8 A min and sink current 2.5 A typ./2 A min (pulse width ≤10 us).
11 COM power_in Power ground for the low-side output driver; must be connected close to VSS.
12 VCC power_in Low-side supply voltage, operating range 10 V to 20 V (absolute maximum -0.3 V to 20 V), with undervoltage lockout.
13 SDHIN input High-side MOSFET current comparator input, referenced to VS, with a 160-200 mV (180 mV typical) trip threshold for cycle-by-cycle overcurrent protection.
14 VS power_in High-side floating ground (high-side source return) that can swing to VB-20 V up to VB+0.3 V.
15 VB power_in Floating high-side bootstrap supply, rated up to 600 V with respect to COM, with undervoltage lockout referenced to VS.
16 HO output Drives the gate of the high-side power MOSFET; source current 2 A min and sink current 2.5 A min (pulse width ≤10 us), referenced to VS.

Key specifications

Parameter Value
Manufacturer EG Micro
Package SOP-16
Category Motor Driver ICs
Pins 16

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
自举高端 VB 电源 VB -0.3 600 V 9
低端电源 VCC -0.3 20 V 9
低端比较器输入 SDLIN -0.3 5 V 9
低压运放端口 INP、INN、AMPO -0.3 5.5 V 9
控制端口 SD、HIN、LIN -0.3 20 V 9
环境温度 TA -45 125 ℃ 9
储存温度 Tstr -65 150 ℃ 9
焊接温度 TL 300 ℃ T=10S 9
高压电源 VB VB 10 600 V 10
VCC 电源 VCC 10 20 V 10
VCC 静态电流 Ivcc 1 1.5 mA VCC=12V 10
VB 静态电流 IB 50 150 uA VBS=12V 10
输入信号高电位 Vin(H) 2.5 V HIN、LIN 输入信号 10
输入信号低电位 Vin(L) -0.3 0 1 V HIN、LIN 输入信号 10
输入逻辑信号高电平的电流 Iin(H) 20 uA Vin=5V 10
输入逻辑信号低电平的电流 Iin(L) -20 uA Vin=0V 10
VCC 开启电压 VCC（ON） 7.5 8.5 9.3 V VCC 相对 VSS 10
VCC 关闭电压 VCC（OFF） 7.1 7.9 8.7 V VCC 相对 VSS 10
VB 开启电压 VB（ON） 7.2 8.2 9.1 V VB 相对 VS 10
VB 关闭电压 VB（OFF） 6.7 7.5 8.3 V VB 相对 VS 10
5V 基准输出 REF5V 4.6 4.8 5 V VCC 开启，VCC=12V 10
线性调整率 ΔVREF 3 50 mV VCC=10V to 20V 10
负载调整率 ΔVREF 5 50 mV IL=0 to 20mA 10
最大输出电流 Iomax 20 mA 10
输入失调电压 VAOS 10 mV 10
输入电压范围 VAICR -0.3 5.3 V 10
输出电压范围 Vout 0 V 10
输出电流能力 Iamp 10 mA 10
高端电流比较器 SDHIN 相对 VS 电压 SDHIN 160 180 200 mV 10
低端电流比较器 SDLIN 相对 COM 电压 SDLIN 160 180 200 mV 10
低端输出 LO 开延时 Ton 280 400 nS 见图 7-1 10
低端输出 LO 关延时 Toff 150 200 nS 见图 7-1 10
低端输出 LO 上升时间 Tr 120 200 nS 见图 7-1，CL=10nF 11
低端输出 LO 下降时间 Tf 80 100 nS 见图 7-1，CL=10nF 11
高端输出 HO 开延时 Ton 300 400 nS 见图 7-2 11
高端输出 HO 关延时 Toff 170 400 nS 见图 7-2 11
高端输出 HO 上升时间 Tr 120 200 nS 见图 7-2，CL=10nF 11
高端输出 HO 下降时间 Tf 100 100 nS 见图 7-2，CL=10nF 11
DT 死区时间 DT 100 160 220 nS 见图 7-3，无负载电容 CL=0 11
LO、HO 输出拉电流 IO+ 1.8 2 A Vo=0V,VIN=VIH PW≤10uS 11
LO、HO 输出灌电流 IO- 2 2.5 A Vo=12V,VIN=VIL PW≤10uS 11

CAD (KiCad official)

  • Symbol: EG1160
  • Footprint: Package_SO:SOIC-16_3.9x9.9mm_P1.27mm
  • 3D model: SOP-16 (KiCad packages3D, STEP)
  • 3D model files: eg1160-etched.step / eg1160-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); eg1160.step / eg1160.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: EG Micro datasheet (15 pp, sha256 a64c04604b900143, retrieved 2026-10-19, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF