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EA8210T6R

Everanalog IC design · DC-DC Converters · SOT-23-6

EA8210T6R from Everanalog IC design, in a SOT-23-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND power_in Ground pin for the regulator; the datasheet recommends two 10uF MLCC input capacitors between PWR and GND.
2 LX output Internal MOSFET switching output that connects to a low-pass filter (inductor and output network) to produce the stable DC output voltage.
3 PWR power_in Power input pin for the EA8210, supplied from 4.5V to 21V (VPWR), with two 10uF MLCC capacitors recommended between PWR and GND.
4 FBK input Feedback input; connect with voltage-dividing resistors between the output and GND to set the output voltage, which is adjustable down to 0.8V (VREF 0.776V to 0.824V).
5 RUN input On/off control input: above 2V enables operation, below 0.4V forces shutdown, and a 100KΩ pull-up to PWR gives automatic startup.
6 BOOT power_in Power input for the internal high-side N-MOSFET gate driver; connect a 100nF ceramic capacitor from BOOT to LX.

Key specifications

Parameter Value
Manufacturer Everanalog IC design
Package SOT-23-6
Category Power Management (PMIC)
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input Voltage VPWR 4.5 21 V 4
Shutdown Supply Current ISD 1 uA VRUN = 0V 4
Quiescent Current IQ 600 800 uA VRUN = 2V, VFBK = 105% VREF 4
Output Load Current ILOAD 2 A 4
Reference Voltage VREF 0.776 0.8 0.824 V 4.5V ≤ VPWR ≤ 21V 4
Switching Frequency FSW 400 500 600 KHz 4
High Side MOSFET On-Resistance RDS(ON)-HM 90 mΩ 4
Low Side MOSFET On-Resistance RDS(ON)-LM 70 mΩ 4
High Side MOSFET Current Limit ILIM-HM 3 4.5 A 4
High Side MOSFET Leakage Current ILEAK-HM 1 10 uA VRUN = 0V, VLX= 0V 4
RUN Pin Input Low Voltage VRUN-L 0.4 V 4
RUN Pin Input High Voltage VRUN-H 2 V 4
Maximum Duty Cycle DMAX 92 % VFBK = 0.7V 4
High Side MOSFET Minimum On Time TONMIN 60 ns 4
Input OVP Threshold VOVP 21.5 V 4
Input OVP Hysteresis VOVP-HYST 100 mV 4
Thermal Shutdown Threshold TOTP 170 °C 4
Input Voltage VPWR -0.3 22 V 3
RUN Pin Input Voltage VRUN -0.3 6 V 3
FBK Pin Voltage VFBK -0.3 6 V 3
Ambient Temperature operating Range TA -40 85 °C 3
Maximum Junction Temperature TJmax 150 °C 3
Lead Temperature (Soldering) 260 °C 10 sec 3
Storage Temperature Range TS -65 150 °C 3
Input Voltage VPWR 4.5 21 V 3
Output Voltage VOUT 0.6 17 V 3
Junction Temperature Range TJ -40 125 °C 3
SOT23-6 Thermal Resistance (junction to case) θJC 125 °C/W 3
SOT23-6 Thermal Resistance (junction to ambient) θJA 250 °C/W 3
SOT23-6 Power Dissipation PDmax 0.5 W TA=25°C 3

CAD (KiCad official)

  • Symbol: EA8210T6R
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-23-6 (KiCad packages3D, STEP)
  • 3D model files: ea8210t6r-etched.step / ea8210t6r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ea8210t6r.step / ea8210t6r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Everanalog IC design datasheet (9 pp, sha256 e7dba026dd8af587, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF