component
E1DQ
Public Made by Adomby adom
Yangzhou Yangjie Elec Tech Fast Recovery / High Efficiency Diodes, SOD-123. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownE1DQ
Yangzhou Yangjie Elec Tech · Fast Recovery / High Efficiency Diodes · SOD-123
E1DQ from Yangzhou Yangjie Elec Tech, in a SOD-123. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | CATHODE | passive | Cathode terminal, marked by the cathode line on the package; for the E1DQ the repetitive peak reverse voltage VRRM is 200 V. |
| 2 | ANODE | passive | Anode terminal of the rectifier diode; the E1DQ is rated for an average rectified output current IO of 1.0 A and a surge forward current IFSM of 30 A (60 Hz half-sine, 1 cycle, Ta=25℃). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOD-123 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | 200 | V | 1 | |||
| Average rectified output current | IO | 1 | A | @60Hz sine wave, resistance load, TL (Fig.1) | 1 | ||
| Surge (non-repetitive) forward current | IFSM | 30 | A | @60Hz half-sine wave, 1 cycle, Ta=25℃ | 1 | ||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Junction temperature | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum instantaneous forward voltage drop per diode | VF | 1 | V | IFM=1.0A | 1 | ||
| Maximum reverse recovery time | TRR | 35 | ns | IF=0.5A, IR=1.0A, IRR=0.25A | 1 | ||
| Typical junction capacitance | CJ | 21 | pF | VR=4V, f=1MHz | 1 | ||
| Maximum DC reverse current at rated DC blocking voltage per diode | IRRM | 5 | μA | Ta=25℃ | 1 | ||
| Maximum DC reverse current at rated DC blocking voltage per diode | IRRM | 100 | μA | Ta=125℃ | 1 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | ● Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 | 1 |
CAD (KiCad official)
- Symbol:
E1DQ - Footprint:
Diode_SMD:D_SOD-123F - 3D model: SOD-123 (KiCad packages3D, STEP)
- 3D model files:
e1dq-etched.step/e1dq-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);e1dq.step/e1dq.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (5 pp, sha256
bb1404c5666bc586, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).