# E18P100KC

**Existar** · MOSFETs · TO-252

E18P100KC from Existar, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of -1.2 V min to -2.5 V max at ID=-250 µA. |
| 2 | D | passive | Drain, the exposed tab and the short middle stub; VDS rated -100 V and continuous current -18 A at TC=25°C. |
| 3 | S | passive | Source of the P-channel MOSFET; body diode forward voltage is -1.2 V max at ISD=-6A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Existar |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | -18 | A | TC=25°C | 1 |
| Continuous Drain Current | ID |  |  | -12 | A | TC=100°C | 1 |
| Drain Current, Pulsed | IDM |  |  | -40 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 36.7 | W |  | 1 |
| Single pulse avalanche energy | EAS |  |  | 81 | mJ |  | 1 |
| Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Drain-Source Breakdown Voltage | BVDSS | -100 |  |  | V | VGS=0V, ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS=-80V, VGS=0V | 2 |
| Gate-Body Leakage Current | IGSS |  |  | -100 | nA | VGS=±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -1.2 | -1.7 | -2.5 | V | VDS=VGS, ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 100 | 110 | mΩ | VGS=-10V, ID=-6A | 2 |
| Drain-Source On-State Resistance | RDS(ON) |  | 110 | 120 | mΩ | VGS=-4.5V, ID=-5A | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, ISD=-6A | 2 |
| Thermal Resistance junction-case | RθJc |  |  | 3.4 | ℃/W |  | 1 |
| Thermal Resistance junction-to-Ambient | RθJA |  |  | 62 | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `E18P100KC`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `e18p100kc-etched.step` / `e18p100kc-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `e18p100kc.step` / `e18p100kc.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Existar datasheet](docs/e18p100kc-datasheet.pdf) (7 pp, sha256 `7f8f98750feb5aa6`, retrieved 2026-11-05, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/e18p100kc-datasheet.pdf)