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E068N8P5CH1

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Existar MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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E068N8P5CH1

Existar · MOSFETs · TO-252

E068N8P5CH1 from Existar, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with VGS(th) of 2 V min, 3 V typ and 4 V max at ID = 250 µA.
2 D passive Drain, shown in the pinout as pin 2 and tied to the exposed tab; VDS 68 V max and continuous ID of 69 A at TC=25°C.
3 S passive Source; the continuous current path with the drain, with ID of 69 A at TC=25°C and 49 A at TC=100°C.

Key specifications

Parameter Value
Manufacturer Existar
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 68 V 2
Gate-source voltage VGS -20 20 V 2
Continuous drain current ID 69 A TC=25°C 2
Continuous drain current ID 49 A TC=100°C 2
Pulsed drain current ID,pulse 276 A 2
Avalanche energy, single pulse EAS 256 mJ 2
Power dissipation PD 103 W TC=25°C 2
Operating junction and storage temperature range TJ, Tstg -55 175 °C 2
Thermal resistance, junction-to-case RθJC 1.45 °C/W Steady state 2
Drain to source breakdown voltage V(BR)DSS 68 V VGS = 0, ID = 250 µA 2
Gate-source threshold voltage VGS(th) 2 3 4 V VDS = VGS, ID = 250 µA 2
Gate-body leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero gate voltage drain current IDSS 1 µA VDS = 68 V, VGS = 0 V 2
Drain-source on-resistance RDS(on) 6.9 8.5 mΩ VGS = 10 V, ID = 40 A 2
Forward transconductance gfs 33 S VDS = 10 V, ID = 20 A 2
Gate resistance Rg 1.7 Ω f=1MHz 2
Total gate charge Qg 55.6 nC VDS = 30 V, ID = 20 A, VGS = 10 V 3
Gate-source charge Qgs 11.6 nC VDS = 30 V, ID = 20 A, VGS = 10 V 3
Gate-drain charge Qgd 6 nC VDS = 30 V, ID = 20 A, VGS = 10 V 3
Turn-on delay time td(on) 17.9 ns VDS = 30 V, VGS = 10 V, RL = 1.5 Ω, RGEN = 6 Ω 3
Rise time tr 10.8 ns VDS = 30 V, VGS = 10 V, RL = 1.5 Ω, RGEN = 6 Ω 3
Turn-off delay time td(off) 42.4 ns VDS = 30 V, VGS = 10 V, RL = 1.5 Ω, RGEN = 6 Ω 3
Fall time tf 10.4 ns VDS = 30 V, VGS = 10 V, RL = 1.5 Ω, RGEN = 6 Ω 3
Input capacitance Ciss 2710 pF VDS = 30 V, VGS = 0 V, f = 1.0 MHz 3
Output capacitance Coss 203 pF VDS = 30 V, VGS = 0 V, f = 1.0 MHz 3
Reverse transfer capacitance Crss 176 pF VDS = 30 V, VGS = 0 V, f = 1.0 MHz 3
Diode forward voltage VSD 1.2 V VGS = 0 V, IS = 20 A 3
Reverse recovery time trr 36.1 ns IF = 20 A, di/dt = 100 A/µs 3
Reverse recovery charge Qrr 44.6 nC IF = 20 A, di/dt = 100 A/µs 3

CAD (KiCad official)

  • Symbol: E068N8P5CH1
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: e068n8p5ch1-etched.step / e068n8p5ch1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); e068n8p5ch1.step / e068n8p5ch1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Existar datasheet (7 pp, sha256 9040912edb0d6aa1, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF