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E060N2P3AL1

Public Made by Adom

by adom

Existar MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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E060N2P3AL1

Existar · MOSFETs · TO-220

E060N2P3AL1 from Existar, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; VGS limit is ±20 V, with threshold of 1.0 V min to 2.3 V max at ID = 250 µA.
2 S passive Source of the N-channel MOSFET; continuous drain current is 180 A at TC=25°C.
3 D passive Drain, also connected to the tab; VDS is 60 V max and pulsed drain current is 720 A.

Key specifications

Parameter Value
Manufacturer Existar
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 60 V 2
Gate-source voltage VGS -20 20 V 2
Continuous drain current ID 180 A TC=25°C 2
Pulsed drain current ID,pulse 720 A 2
Avalanche energy, single pulse EAS 240 mJ 2
Power dissipation PD 132 W TC=25°C 2
Operating junction and storage temperature range TJ, Tstg -55 150 ℃ 2
Thermal resistance, junction-to-case RθJC 0.95 °C/W Steady state 2
Thermal resistance, junction-to-ambient RθJA 50 °C/W Steady state 2
Drain to source breakdown voltage V(BR)DSS 60 V VGS = 0, ID = 250 µA 2
Gate-source threshold voltage VGS(th) 1 2.3 V VDS = VGS, ID = 250 µA 2
Gate-body leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero gate voltage drain current IDSS 1 µA VDS = 45 V, VGS = 0 V 2
Drain-source on-resistance RDS(on) 2.1 2.3 mΩ VGS = 10 V, ID = 30 A 2
Drain-source on-resistance RDS(on) 2.4 2.8 mΩ VGS = 4.5 V, ID = 30 A 2
Gate resistance Rg 2.3 Ω f=1MHz 3
Total gate charge Qg 104 nC VDS = 50 V, ID = 50 A, VGS = 10 V 3
Gate-source charge Qgs 17 nC VDS = 50 V, ID = 50 A, VGS = 10 V 3
Gate-drain charge Qgd 16.8 nC VDS = 50 V, ID = 50 A, VGS = 10 V 3
Turn-on delay time td(on) 32.2 ns VDS = 50 V, ID =50 A, VGS = 10 V, RGEN = 2 Ω 3
Rise time tr 53.3 ns VDS = 50 V, ID =50 A, VGS = 10 V, RGEN = 2 Ω 3
Turn-off delay time td(off) 93.2 ns VDS = 50 V, ID =50 A, VGS = 10 V, RGEN = 2 Ω 3
Fall time tf 25.3 ns VDS = 50 V, ID =50 A, VGS = 10 V, RGEN = 2 Ω 3
Input capacitance Ciss 6638 pF 3
Output capacitance Coss 1275 pF VDS =25 V, VGS = 0 V, f = 100kHz 3
Reverse transfer capacitance Crss 58.1 pF 3
Diode forward voltage VSD 1.3 V VGS = 0 V, IF = 20 A 3
Reverse recovery time trr 86.8 ns VR= 50 V, IS =50 A, di/dt = 100 A/μs 3
Reverse recovery charge Qrr 130 nC 3

CAD (KiCad official)

  • Symbol: E060N2P3AL1
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: e060n2p3al1-etched.step / e060n2p3al1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); e060n2p3al1.step / e060n2p3al1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Existar datasheet (8 pp, sha256 eeef6f84103ec65f, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF