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DXT651-13

Public Made by Adom

by adom

Diodes Incorporated Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DXT651-13

Diodes Incorporated · Bipolar (BJT) · SOT-89

DXT651-13 from Diodes Incorporated, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base; drive current limited by IB max 500 mA, with VEBO max 5 V.
2 C passive Collector (also the exposed collector tab); VCEO 60 V, VCBO 80 V, IC 3 A continuous and ICM 6 A peak.
3 E passive Emitter of the NPN transistor; VEBO max 5 V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCBO 80 V IC = 100µA 4
Collector-Emitter Breakdown Voltage BVCEO 60 V IC = 10mA 4
Emitter-Base Breakdown Voltage BVEBO 5 V IE = 100A 4
Collector-Base Cutoff Current ICBO 0.1 10 µA VCB = 60V; VCB = 60V, TA = +100°C 4
Emitter-Base Cutoff Current IEBO 0.1 µA VEB = 4V 4
Collector-Emitter Saturation Voltage VCE(sat) 0.08 0.3 V IC = 1A, IB = 100mA 4
Collector-Emitter Saturation Voltage VCE(sat) 0.23 0.6 V IC = 3A, IB = 300mA 4
Base-Emitter Saturation Voltage VBE(sat) 0.85 1.25 V IC = 1A, IB = 100mA 4
Base-Emitter Turn-On Voltage VBE(on) 0.8 1 V VCE = 2V, IC = 1A 4
DC Current Gain hFE 70 200 VCE = 2V, IC = 50mA 4
DC Current Gain hFE 100 200 VCE = 2V, IC = 500mA 4
DC Current Gain hFE 80 185 VCE = 2V, IC = 1A 4
DC Current Gain hFE 40 120 VCE = 2V, IC = 2A 4
DC Current Gain hFE 300 VCE = 2V (IC column not paired in text) 4
Transition Frequency fT 140 200 MHz VCE = 5V, IC = 100mA, f = 100MHz 4
Output Capacitance Cobo 30 pF VCB = 10V, f = 1MHz 4
Collector-Base Voltage VCBO 80 V 2
Collector-Emitter Voltage VCEO 60 V 2
Emitter-Base Voltage VEBO 5 V 2
Collector Current IC 3 A 2
Peak Pulse Collector Current ICM 6 A 2
Base Current IB 500 mA 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Power Dissipation PD 1 W Note 5: surface mounted on 15mm x 15mm x 0.6mm FR4 PCB, still air 2
Power Dissipation PD 2 W Note 6: 40mm x 40mm x 1.6mm FR4 PCB 2
Thermal Resistance, Junction to Ambient Air RθJA 125 C/W Note 5: 15mm x 15mm x 0.6mm FR4 PCB, still air 2
Thermal Resistance, Junction to Ambient Air RθJA 62.5 C/W Note 6: 40mm x 40mm x 1.6mm FR4 PCB 2
Thermal Resistance, Junction to Case RθJC 26 C/W 2
Thermal Resistance, Junction to Leads RθJL 6 C/W Note 7: junction to solder-point (exposed collector pad) 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: DXT651-13
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: dxt651-13-etched.step / dxt651-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dxt651-13.step / dxt651-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 318520d954645bf4, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF