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Contents

README

markdown

DXT5401-13

Diodes Incorporated · Bipolar Transistors - BJT · SOT-89

DXT5401-13 from Diodes Incorporated, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; the datasheet rates VEBO at -5.0V and IC at -600mA.
2 C passive Collector of the PNP transistor, connected to the center lead and the collector tab; the datasheet rates VCEO at -150V, VCBO at -160V and IC at -600mA.
3 E passive Emitter of the PNP transistor; the datasheet rates VEBO at -5.0V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-89
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage V(BR)CBO -160 V IC = -100µA, IE = 0 4
Collector-Emitter Breakdown Voltage V(BR)CEO -150 V IC = -1.0mA, IB = 0 4
Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE = -10µA, IC = 0 4
Collector Cutoff Current ICBO -50 nA VCB = -120V, IE = 0 4
Emitter Cutoff Current IEBO -50 nA VEB = -3.0V, IC = 0 4
DC Current Gain hFE 50 VCE = -5.0V, IC = -1.0mA 4
DC Current Gain hFE 60 240 VCE = -5.0V, IC = -10mA 4
Collector-Emitter Saturation Voltage VCE(SAT) -0.2 V IC = -10mA, IB = -1.0mA 4
Collector-Emitter Saturation Voltage VCE(SAT) -0.5 V IC = -50mA, IB = -5.0mA 4
Base-Emitter Saturation Voltage VBE(SAT) -1 V IC = -10mA, IB = -1.0mA; IC = -50mA, IB = -5.0mA 4
Output Capacitance Cobo 6 pF VCB = -10V, f = 1.0MHz, IE = 0 4
Small Signal Current Gain hfe 40 260 VCE = -10V, IC = -1.0mA, f = 1.0kHz 4
Current Gain-Bandwidth Product fT 100 300 MHz VCE = -10V, IC = -10mA, f = 100MHz 4
Noise Figure NF 8 dB VCE = -5.0V, IC = -200µA, RS = 10Ω, f = 1.0kHz 4
Collector-Base Voltage VCBO -160 V TA = +25°C 2
Collector-Emitter Voltage VCEO -150 V TA = +25°C 2
Emitter-Base Voltage VEBO -5 V TA = +25°C 2
Collector Current IC -600 mA TA = +25°C 2
Power Dissipation PD 1 W TA = +25°C (Note 5) 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Thermal Resistance, Junction to Ambient RθJA 125 °C/W TA = +25°C (Note 5) 2
ESD Human Body Model ESD HBM 4000 V JEDEC Class 3A 2
ESD Machine Model ESD MM 400 V JEDEC Class C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: DXT5401-13
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: dxt5401-13-etched.step / dxt5401-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dxt5401-13.step / dxt5401-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 105e4edfd9b2b763, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF