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DXT3904-13
Public Made by Adomby adom
Diodes Incorporated Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownDXT3904-13
Diodes Incorporated · Bipolar Transistors - BJT · SOT-89
DXT3904-13 from Diodes Incorporated, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; drawn as the bottom lead in the top-view pin-out (BVEBO 6 V min, VEBO max 6 V). |
| 2 | C | passive | Collector, middle lead, connected internally to the exposed collector tab (VCEO 40 V, VCBO 60 V, IC 200 mA continuous). |
| 3 | E | passive | Emitter of the NPN transistor; drawn as the top lead in the top-view pin-out. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 60 | V | TA = +25°C | 2 | ||
| Collector-Emitter Voltage | VCEO | 40 | V | TA = +25°C | 2 | ||
| Emitter-Base Voltage | VEBO | 6 | V | TA = +25°C | 2 | ||
| Collector Current, Continuous | IC | 200 | mA | TA = +25°C | 2 | ||
| Power Dissipation (Note 5) | PD | 0.75 | W | Minimum recommended pad layout, TA = +25°C | 2 | ||
| Power Dissipation (Note 6) | PD | 1.2 | W | 25mm x 25mm 1oz copper, TA = +25°C | 2 | ||
| Operating and Storage Temperature Range | Tj, TSTG | -55 | 150 | °C | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 5) | RθJA | 166 | °C/W | Minimum recommended pad layout | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | 104 | °C/W | 25mm x 25mm 1oz copper | 2 | ||
| ESD Human Body Model | ESD HBM | 4000 | V | JEDEC Class 3A | 2 | ||
| ESD Machine Model | ESD MM | 400 | V | JEDEC Class C | 2 | ||
| Collector-Base Breakdown Voltage | BVCBO | 60 | V | IC = 10µA, IE = 0 | 3 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | 40 | V | IC = 1.0mA, IB = 0 | 3 | ||
| Emitter-Base Breakdown Voltage | BVEBO | 6 | V | IE = 10µA, IC = 0 | 3 | ||
| Collector Cutoff Current | ICEX | 50 | nA | VCE = 30V, VEB(OFF) = 3.0V | 3 | ||
| Base Cutoff Current | IBL | 50 | nA | VCE = 30V, VEB(OFF) = 3.0V | 3 | ||
| DC Current Gain | hFE | 40 | IC = 100µA, VCE = 1.0V | 3 | |||
| DC Current Gain | hFE | 70 | IC = 1.0mA, VCE = 1.0V | 3 | |||
| DC Current Gain | hFE | 100 | 300 | IC = 10mA, VCE = 1.0V | 3 | ||
| DC Current Gain | hFE | 60 | IC = 50mA, VCE = 1.0V | 3 | |||
| DC Current Gain | hFE | 30 | IC = 100mA, VCE = 1.0V | 3 | |||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.2 | V | IC = 10mA, IB = 1.0mA | 3 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.3 | V | IC = 50mA, IB = 5.0mA | 3 | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | 0.65 | 0.85 | V | IC = 10mA, IB = 1.0mA | 3 | |
| Base-Emitter Saturation Voltage | VBE(SAT) | 0.95 | V | IC = 50mA, IB = 5.0mA | 3 | ||
| Output Capacitance | Cobo | 4 | pF | VCB = 5.0V, f = 1.0MHz, IE = 0 | 3 | ||
| Input Capacitance | Cibo | 8 | pF | VEB = 0.5V, f = 1.0MHz, IC = 0 | 3 | ||
| Input Impedance | hie | 1 | 10 | kΩ | VCE = 10V, IC = 1.0mA, f = 1.0kHz | 3 | |
| Voltage Feedback Ratio | hre | 0.5 | 8 | x 10-4 | VCE = 10V, IC = 1.0mA, f = 1.0kHz | 3 | |
| Small Signal Current Gain | hfe | 100 | 400 | VCE = 10V, IC = 1.0mA, f = 1.0kHz | 3 | ||
| Output Admittance | hoe | 1 | 40 | µS | VCE = 10V, IC = 1.0mA, f = 1.0kHz | 3 | |
| Current Gain-Bandwidth Product | fT | 300 | MHz | VCE = 20V, IC = 10mA, f = 100MHz | 3 | ||
| Noise Figure | NF | 5 | dB | VCE = 5.0V, IC = 100µA, RS = 1.0kΩ, f = 1.0kHz | 3 | ||
| Delay Time | td | 35 | ns | VCC = 3.0V, IC = 10mA, VBE(off) = -0.5V, IB1 = 1.0mA | 3 | ||
| Rise Time | tr | 35 | ns | VCC = 3.0V, IC = 10mA, VBE(off) = -0.5V, IB1 = 1.0mA | 3 | ||
| Storage Time | ts | 200 | ns | VCC = 3.0V, IC = 10mA, IB1 = -IB2 = 1.0mA | 3 | ||
| Fall Time | tf | 50 | ns | VCC = 3.0V, IC = 10mA, IB1 = -IB2 = 1.0mA | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
DXT3904-13 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
dxt3904-13-etched.step/dxt3904-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dxt3904-13.step/dxt3904-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
462478b46a1dfa54, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).