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Contents

README

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DXT2907A-13

Diodes Incorporated · Bipolar (BJT) · SOT-89

DXT2907A-13 from Diodes Incorporated, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the PNP transistor; drawn at the bottom lead of the top-view pin-out, with VEBO limited to -5 V.
2 C passive Collector (center lead), connected internally to the exposed collector tab; VCEO -60 V, IC -600 mA, ICM -800 mA.
3 E passive Emitter of the PNP transistor; drawn at the top lead of the top-view pin-out, with VEBO limited to -5 V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO -60 V 2
Collector-Emitter Voltage VCEO -60 V 2
Emitter-Base Voltage VEBO -5 V 2
Collector Current IC -600 mA 2
Peak Collector Current ICM -800 mA 2
ESD Human Body Model ESD HBM 4000 V JEDEC Class 3A (Note 7) 2
ESD Machine Model ESD MM 400 V JEDEC Class C (Note 7) 2
Power Dissipation PD 0.75 W Note 5: minimum recommended pad layout, 1oz Cu, single-sided 1.6mm FR-4 2
Power Dissipation PD 1.2 W Note 6: 25mm x 25mm 1oz copper pad 2
Thermal Resistance, Junction to Ambient Air RJA 166 °C/W Note 5 2
Thermal Resistance, Junction to Ambient Air RJA 104 °C/W Note 6 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Collector-Base Breakdown Voltage BVCBO -60 -120 V IC = -100µA 3
Collector-Emitter Breakdown Voltage BVCEO -60 -80 V IC = -10mA 3
Emitter-Base Breakdown Voltage BVEBO -5 -8.8 V IE = -100µA 3
Collector Cut-off Current ICBO -1 -50 nA VCB = -50V 3
Collector Cut-off Current ICBO -50 µA VCB = -50V, TA = +100°C 3
Collector Cutoff Current ICEX -50 nA VCE = -30V, VEB(OFF) = -0.5V 3
Emitter Cut-off Current IEBO -50 nA VEB = -5V 3
Static Forward Current Transfer Ratio hFE 75 208 IC = -100A, VCE = -10V (as printed) 3
Static Forward Current Transfer Ratio hFE 100 207 IC = -1mA, VCE = -10V 3
Static Forward Current Transfer Ratio hFE 100 202 IC = -10mA, VCE = -10V 3
Static Forward Current Transfer Ratio hFE 100 169 300 IC = -150mA, VCE = -10V 3
Static Forward Current Transfer Ratio hFE 50 103 IC = -500mA, VCE = -10V 3
Collector-Emitter Saturation Voltage VCE(SAT) -130 -400 mV IC = -150mA, IB = -15mA 3
Collector-Emitter Saturation Voltage VCE(SAT) -0.4 -1.6 V IC = -500mA, IB = -50mA 3
Base-Emitter Saturation Voltage VBE(SAT) -0.86 -1.3 V IC = -150mA, IB = -15mA 3
Base-Emitter Saturation Voltage VBE(SAT) -1 -2.6 V IC = -500mA, IB = -50mA 3
Output Capacitance Cobo 8 pF VCB = -10V, IE = 0, f = 1MHz 3
Current Gain-Bandwidth Product fT 200 MHz VCE = -20V, IC = -50mA, f = 100MHz 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: DXT2907A-13
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: dxt2907a-13-etched.step / dxt2907a-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dxt2907a-13.step / dxt2907a-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 8a071f3450401048, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF