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Generated by kicad-footprint-generator · KiCad file format 20260206

Name	Last commit message	Last updated
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dtb114echzgt116-etched.step	dtb114echzgt116: factory component page (tier=mfr) · Ray	10d ago
dtb114echzgt116-hero.glb	dtb114echzgt116: hero GLB from the etched model (keeps the MPN mark) · Ray	10d ago
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dtb114echzgt116.kicad_sym	dtb114echzgt116: symbol repaired (body fitted to the names) · Ray	1d ago
dtb114echzgt116.lbr	dtb114echzgt116: symbol repaired (body fitted to the names) · Ray	1d ago
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DTB114ECHZGT116

ROHM Semicon · Digital Transistors · TO-236-3(SOT-23-3)

DTB114ECHZGT116 from ROHM Semicon, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	GND (EMITTER)	power_in	Emitter of the built-in PNP transistor, used as the GND (+) reference; the datasheet gives VCC of -50V and IC(MAX) of -500mA for the part.
2	IN (BASE)	input	Base input through built-in R1 = 10kΩ, with R2 = 10kΩ to the emitter; input voltage range is -40 to 10V, VI(off) max -0.5V and VI(on) min -3.0V.
3	OUT (COLLECTOR)	output	Collector output of the built-in PNP transistor, rated for IC(MAX) of -500mA and VCC of -50V, with VO(on) max -300mV at IO = -50mA.

Key specifications

Parameter	Value
Manufacturer	ROHM Semicon
Package	TO-236-3(SOT-23-3)
Category	Triode/MOS Tube/Transistor
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Supply voltage	VCC			-50	V	Ta = 25°C	2
Input voltage	VIN	-40		10	V	Ta = 25°C	2
Collector current	IC(MAX)			-500	mA	Ta = 25°C	2
Power dissipation	PD			200	mW	Ta = 25°C; each terminal mounted on a reference land	2
Junction temperature	Tj			150	°C	Ta = 25°C	2
Storage temperature range	Tstg	-55		150	°C	Ta = 25°C	2
Input voltage (off)	VI(off)			-0.5	V	VCC = -5V, IO = -100μA	2
Input voltage (on)	VI(on)	-3			V	VO = -0.3V, IO = -10mA	2
Output voltage	VO(on)		-100	-300	mV	IO = -50mA, II = -2.5mA	2
Input current	II			-880	μA	VI = -5V	2
Output current	IO(off)			-500	nA	VCC = -50V, VI = 0V	2
DC current gain	GI	56				VO = -5V, IO = -50mA; pulsed	2
Input resistance	R1	7	10	13	kΩ		2
Resistance ratio	R2/R1	0.8	1	1.2			2
Transition frequency	fT		200		MHz	VCE = -10V, IE = 50mA, f = 100MHz; characteristics of built-in transistor	2

CAD (KiCad official)

Symbol: DTB114ECHZGT116
Footprint: Package_TO_SOT_SMD:SOT-23
3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
3D model files: dtb114echzgt116-etched.step / dtb114echzgt116-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dtb114echzgt116.step / dtb114echzgt116.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: ROHM Semicon datasheet (8 pp, sha256 4cca7edf0818fd5c, retrieved 2026-10-27, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF