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DTA143TUAT106
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ROHM Semicon Digital Transistors, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DTA143TUAT106
ROHM Semicon · Digital Transistors · SOT-323
DTA143TUAT106 from ROHM Semicon, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter of the built-in PNP transistor; VEBO limit is -5 V. |
| 2 | BASE | input | Base input through built-in R1 = 4.7 kΩ (3.29 to 6.11 kΩ), so no external input resistor is needed. |
| 3 | COLLECTOR | passive | Collector of the built-in PNP transistor; VCEO is -50 V and IC is -100 mA max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | BVCEO | -50 | V | IC = -1mA | 2 | ||
| Collector-base breakdown voltage | BVCBO | -50 | V | IC = -50μA | 2 | ||
| Emitter-base breakdown voltage | BVEBO | -5 | V | IE = -50μA | 2 | ||
| Collector cut-off current | ICBO | -500 | nA | VCB = -50V | 2 | ||
| Emitter cut-off current | IEBO | -500 | nA | VEB = -4V | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | -300 | mV | IC = -5mA, IB = -0.25mA | 2 | ||
| DC current gain | hFE | 100 | 250 | 600 | - | VCE = -5V, IC = -1mA | 2 |
| Input resistance | R1 | 3.29 | 4.7 | 6.11 | kΩ | 2 | |
| Collector-base voltage | VCBO | -50 | V | 2 | |||
| Collector-emitter voltage | VCEO | -50 | V | 2 | |||
| Emitter-base voltage | VEBO | -5 | V | 2 | |||
| Collector current | IC | -100 | mA | 2 | |||
| Power dissipation (DTA143TUA, SOT-323) | PD | 200 | mW | Each terminal mounted on a reference land | 2 | ||
| Junction temperature | Tj | 150 | ℃ | 2 | |||
| Range of storage temperature | Tstg | -55 | 150 | ℃ | 2 |
CAD (KiCad official)
- Symbol:
DTA143TUAT106 - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
dta143tuat106-etched.step/dta143tuat106-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dta143tuat106.step/dta143tuat106.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (12 pp, sha256
3ed2cbcdfe7c2672, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DTA143TUAT106
**ROHM Semicon** · Digital Transistors · SOT-323
DTA143TUAT106 from ROHM Semicon, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter of the built-in PNP transistor; VEBO limit is -5 V. |
| 2 | BASE | input | Base input through built-in R1 = 4.7 kΩ (3.29 to 6.11 kΩ), so no external input resistor is needed. |
| 3 | COLLECTOR | passive | Collector of the built-in PNP transistor; VCEO is -50 V and IC is -100 mA max. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter breakdown voltage | BVCEO | -50 | | | V | IC = -1mA | 2 |
| Collector-base breakdown voltage | BVCBO | -50 | | | V | IC = -50μA | 2 |
| Emitter-base breakdown voltage | BVEBO | -5 | | | V | IE = -50μA | 2 |
| Collector cut-off current | ICBO | | | -500 | nA | VCB = -50V | 2 |
| Emitter cut-off current | IEBO | | | -500 | nA | VEB = -4V | 2 |
| Collector-emitter saturation voltage | VCE(sat) | | | -300 | mV | IC = -5mA, IB = -0.25mA | 2 |
| DC current gain | hFE | 100 | 250 | 600 | - | VCE = -5V, IC = -1mA | 2 |
| Input resistance | R1 | 3.29 | 4.7 | 6.11 | kΩ | | 2 |
| Collector-base voltage | VCBO | | | -50 | V | | 2 |
| Collector-emitter voltage | VCEO | | | -50 | V | | 2 |
| Emitter-base voltage | VEBO | | | -5 | V | | 2 |
| Collector current | IC | | | -100 | mA | | 2 |
| Power dissipation (DTA143TUA, SOT-323) | PD | | | 200 | mW | Each terminal mounted on a reference land | 2 |
| Junction temperature | Tj | | | 150 | ℃ | | 2 |
| Range of storage temperature | Tstg | -55 | | 150 | ℃ | | 2 |
## CAD (KiCad official)
- Symbol: `DTA143TUAT106`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `dta143tuat106-etched.step` / `dta143tuat106-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dta143tuat106.step` / `dta143tuat106.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ROHM Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588881297989111808) (12 pp, sha256 `3ed2cbcdfe7c2672`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dta143tuat106-datasheet.pdf)