component

DTA115EKAT146

Public Made by Adom

by adom

ROHM Semicon Bipolar Transistors - BJT, TO-236-3(SOT-23-3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistordta115ekat146factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
dta115ekat146 / README.md
History Download
Ray Publish 0.1.0 78aca60 9d ago

DTA115EKAT146

ROHM Semicon · Bipolar Transistors - BJT · TO-236-3(SOT-23-3)

DTA115EKAT146 from ROHM Semicon, in a TO-236-3(SOT-23-3). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND (EMITTER) power_in Ground (+) / emitter terminal of the built-in PNP transistor; R2 (100kΩ) is connected between base and this pin.
2 IN (BASE) input Input/base terminal connected through built-in R1 = 100kΩ; VI(off) max -0.5V, VI(on) min -3.0V, input voltage range -40 to 10V.
3 OUT (COLLECTOR) output Output/collector terminal with IO max -20mA (IC(MAX) -100mA) and VCC max -50V.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package TO-236-3(SOT-23-3)
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage VCC -50 V Ta = 25°C 2
Input voltage VIN -40 10 V Ta = 25°C 2
Output current IO -20 mA Ta = 25°C 2
Collector current IC(MAX) -100 mA Ta = 25°C; characteristics of built-in transistor 2
Power dissipation DTA115EKA PD 200 mW Ta = 25°C; each terminal mounted on a reference land 2
Junction temperature Tj 150 ℃ Ta = 25°C 2
Range of storage temperature Tstg -55 150 ℃ Ta = 25°C 2
Input voltage (off) VI(off) -0.5 V VCC = -5V, IO = -100μA 2
Input voltage (on) VI(on) -3 V VO = -0.3V, IO = -1mA 2
Output voltage VO(on) -100 -300 mV IO = -5mA, II = -0.25mA 2
Input current II -150 μA VI = -5V 2
Output current (off) IO(off) -500 nA VCC = -50V, VI = 0V 2
DC current gain GI 82 - VO = -5V, IO = -5mA 2
Input resistance R1 70 100 130 kΩ 2
Resistance ratio R2/R1 0.8 1 1.2 - 2
Transition frequency fT 250 MHz VCE = -10V, IE = 5mA, f = 100MHz; characteristics of built-in transistor 2

CAD (KiCad official)

  • Symbol: DTA115EKAT146
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: TO-236-3(SOT-23-3) (KiCad packages3D, STEP)
  • 3D model files: dta115ekat146-etched.step / dta115ekat146-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dta115ekat146.step / dta115ekat146.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (12 pp, sha256 ee3621ee0c79145e, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF