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DT6250-06MR-13

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Diodes Incorporated ESD Protection Devices, MSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DT6250-06MR-13

Diodes Incorporated · ESD Protection Devices · MSOP-8

DT6250-06MR-13 from Diodes Incorporated, in a MSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 I/O1 passive ESD-protected I/O channel 1 (steered to Vss/Vcc), rated ±8kV contact per IEC 61000-4-2 and 0.32pF typical channel capacitance.
2 I/O2 passive ESD-protected I/O channel 2 (steered to Vss/Vcc), rated ±8kV contact per IEC 61000-4-2 and 0.32pF typical channel capacitance.
3 I/O3 passive ESD-protected I/O channel 3 (steered to Vss/Vcc), rated ±8kV contact per IEC 61000-4-2 and 0.32pF typical channel capacitance.
4 I/O4 passive ESD-protected I/O channel 4 (steered to Vss/Vcc), rated ±8kV contact per IEC 61000-4-2 and 0.32pF typical channel capacitance.
5 I/O5 passive ESD-protected I/O channel 5 (steered to Vss/Vcc), rated ±8kV contact per IEC 61000-4-2 and 0.32pF typical channel capacitance.
6 I/O6 passive ESD-protected I/O channel 6 (steered to Vss/Vcc), rated ±8kV contact per IEC 61000-4-2 and 0.32pF typical channel capacitance.
7 Vss power_in Ground reference for the TVS array; I/O-to-Vss peak pulse current is 4A (8/20µs).
8 Vcc power_in Positive supply/reference pin with reverse working voltage of 5.0V max and breakdown voltage of 6V min (Vcc to Vss).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package MSOP-8
Category Circuit Protection
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Reverse Working Voltage VRWM 5 V VCC to VSS 2
Reverse Leakage Current IR_VCC 2.5 μA VCC = 5V, VCC to VSS 2
Channel Leakage Current IR_IO 1 μA VCC = 5V, any I/O to VSS 2
Reverse Breakdown Voltage VBR 6 V IBV = 1mA, VCC to VSS 2
Forward Voltage VF 0.8 1.2 V IF = 15mA, VSS to VCC 2
Peak Pulse Current IPP 4 A I/O to VSS, 8/20µs, per IEC 61000-4-5 2
ESD Protection, Contact Discharge VESD_I/O -8 8 kV IO to VSS, per IEC 61000-4-2 2
Operating Temperature TOP -40 85 °C 2
Storage Temperature TSTG -55 150 °C 2
Power Dissipation PD 500 mW Note 5 2
Thermal Resistance, Junction to Ambient RθJA 250 °C/W Note 5 2
ESD Clamping Voltage I/O VESD_I/O 10 V TLP, 10A, tp = 100ns, I/O to VSS 2
ESD Clamping Voltage VCC VESD_VCC 9 V TLP, 10A, tp = 100ns, VCC to VSS 2
Differential Resistance I/O RDIF_I/O 0.35 Ω TLP, 10A, tp = 100ns, I/O to VSS 2
Differential Resistance VCC RDIF_VCC 0.25 Ω TLP, 10A, tp = 100ns, VCC to VSS 2
Channel Input Capacitance CI/O 0.32 pF VI/O = 2.5V, VCC = 5V, f = 1MHz 2
Delta CI/O CI/OMAX-CI/OMIN 0.05 pF CI/OMAX-CI/OMIN 2

CAD (KiCad official)

  • Symbol: DT6250-06MR-13
  • Footprint: Package_SO:MSOP-8_3x3mm_P0.65mm
  • 3D model: MSOP-8 (KiCad packages3D, STEP)
  • 3D model files: dt6250-06mr-13-etched.step / dt6250-06mr-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dt6250-06mr-13.step / dt6250-06mr-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (5 pp, sha256 4b41663452a51ed7, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF