# DSSK80-006B

**IXYS** · Schottky Barrier Diodes (SBD) · TO-247-3

DSSK80-006B from IXYS, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A | passive | Anode of the first diode (2x40 A, 60 V common-cathode Schottky rectifier). |
| 2 | C | passive | Common cathode of both diodes, also connected to the TAB. |
| 3 | A | passive | Anode of the second diode (2x40 A, 60 V common-cathode Schottky rectifier). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | IXYS |
| Package | TO-247-3 |
| Category | Diodes |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse current | IR |  |  | 20 | mA | VR = VRRM; TVJ = 25°C | 1 |
| Reverse current | IR |  |  | 200 | mA | VR = VRRM; TVJ = 100°C | 1 |
| Forward voltage | VF |  |  | 0.51 | V | IF = 40 A; TVJ = 125°C | 1 |
| Forward voltage | VF |  |  | 0.55 | V | IF = 40 A; TVJ = 25°C | 1 |
| Forward voltage | VF |  |  | 0.74 | V | IF = 80 A; TVJ = 125°C | 1 |
| Thermal resistance junction to case | RthJC |  |  | 0.8 | K/W |  | 1 |
| Thermal resistance case to heatsink | RthCH |  | 0.25 |  | K/W |  | 1 |
| Max repetitive reverse voltage | VRRM |  |  | 60 | V |  | 1 |
| Max non-repetitive reverse voltage | VRSM |  |  | 60 | V |  | 1 |
| RMS forward current | IFRMS |  |  | 70 | A |  | 1 |
| Average forward current per diode | IFAV |  |  | 40 | A | TC = 120°C; rectangular, d = 0.5 | 1 |
| Average forward current per device | IFAV |  |  | 80 | A | TC = 120°C; rectangular, d = 0.5; per device | 1 |
| Surge forward current | IFSM |  |  | 600 | A | TVJ = 45°C; tp = 10 ms (50 Hz), sine | 1 |
| Non-repetitive avalanche energy | EAS |  |  | 20 | mJ | IAS = 20 A; L = 100 µH; TVJ = 25°C; non repetitive | 1 |
| Repetitive avalanche current | IAR |  |  | 2 | A | VA = 1.5·VRRM typ.; f = 10 kHz; repetitive | 1 |
| Critical voltage rise rate | (dv/dt)cr |  |  | 1000 | V/µs |  | 1 |
| Operating junction temperature | TVJ | -55 |  | 150 | °C |  | 1 |
| Max junction temperature | TVJM |  |  | 150 | °C |  | 1 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 1 |
| Total power dissipation | Ptot |  |  | 155 | W | TC = 25°C | 1 |

## CAD (KiCad official)

- Symbol: `DSSK80-006B`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `dssk80-006b-etched.step` / `dssk80-006b-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dssk80-006b.step` / `dssk80-006b.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [IXYS datasheet](docs/dssk80-006b-datasheet.pdf) (2 pp, sha256 `271aff864bedba69`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dssk80-006b-datasheet.pdf)