component
DSS8110Y-7
Public Made by Adomby adom
Diodes Incorporated Bipolar Transistors - BJT, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
DSS8110Y-7
Diodes Incorporated · Bipolar Transistors - BJT · SOT-363
DSS8110Y-7 from Diodes Incorporated, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Collector terminal of the NPN transistor, one of four collector pins (1, 2, 5, 6) on the SOT-363 pinout, with BVCEO > 100V and IC = 1A continuous. |
| 2 | C | passive | Collector terminal of the NPN transistor, one of four collector pins (1, 2, 5, 6) on the SOT-363 pinout, with BVCEO > 100V and IC = 1A continuous. |
| 3 | B | input | Base terminal of the NPN transistor, with a continuous base current rating of 0.3A and VEBO of 5V maximum. |
| 4 | E | passive | Emitter terminal of the NPN transistor, with VEBO of 5V maximum. |
| 5 | C | passive | Collector terminal of the NPN transistor, one of four collector pins (1, 2, 5, 6) on the SOT-363 pinout, with BVCEO > 100V and IC = 1A continuous. |
| 6 | C | passive | Collector terminal of the NPN transistor, one of four collector pins (1, 2, 5, 6) on the SOT-363 pinout, with BVCEO > 100V and IC = 1A continuous. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-363 |
| Category | Transistors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | 120 | V | IC = 100µA, IE = 0 | 4 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | 100 | V | IC = 10mA, IB = 0 | 4 | ||
| Emitter-Base Breakdown Voltage | BVEBO | 5 | V | IE = 100µA, IC = 0 | 4 | ||
| Collector Cutoff Current | ICBO | 100 | nA | VCB = 80V, IE = 0 | 4 | ||
| Collector Cutoff Current | ICBO | 50 | µA | VCB = 80V, IE = 0, TA = 150°C | 4 | ||
| Emitter Cutoff Current | IEBO | 100 | nA | VEB = 4V, IC = 0 | 4 | ||
| DC Current Gain | hFE | 150 | VCE = 10V, IC = 1mA | 4 | |||
| DC Current Gain | hFE | 100 | VCE = 10V, IC = 500mA | 4 | |||
| DC Current Gain | hFE | 80 | VCE = 10V, IC = 1A | 4 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | 40 | mV | IC = 100mA, IB = 10mA | 4 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 120 | mV | IC = 500mA, IB = 50mA | 4 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 200 | mV | IC = 1A, IB = 100mA | 4 | ||
| Collector-Emitter Saturation Resistance | RCE(sat) | 200 | mΩ | IC = 1A, IB = 100mA | 4 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 1.05 | V | IC = 1A, IB = 100mA | 4 | ||
| Base-Emitter Turn On Voltage | VBE(on) | 0.9 | V | VCE = 10V, IC = 1A | 4 | ||
| Output Capacitance | Cobo | 7.5 | pF | VCB = 10V, f = 1.0MHz | 4 | ||
| Current Gain-Bandwidth Product | fT | 100 | MHz | VCE = 10V, IC = 50mA, f = 100MHz | 4 | ||
| Collector-Base Voltage | VCBO | 120 | V | 2 | |||
| Collector-Emitter Voltage | VCEO | 100 | V | 2 | |||
| Emitter-Base Voltage | VEBO | 5 | V | 2 | |||
| Collector Current - Continuous | IC | 1 | A | 2 | |||
| Peak Pulse Collector Current | ICM | 3 | A | 2 | |||
| Base Current - Continuous | IB | 0.3 | A | 2 | |||
| Power Dissipation | PD | 625 | mW | Note 5: minimum recommended pad layout, single-sided 1.6mm FR4 PCB, still air | 2 | ||
| Thermal Resistance, Junction to Ambient | RJA | 200 | °C/W | Note 5: minimum recommended pad layout, single-sided 1.6mm FR4 PCB, still air | 2 | ||
| Thermal Resistance, Junction to Lead | RJL | 81 | °C/W | Note 6: junction to solder-point (at the end of collector lead) | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Electrostatic Discharge - Human Body Model | ESD HBM | 4000 | V | JEDEC Class 3A | 2 | ||
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | JEDEC Class C | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Finish - Matte Tin Plated Leads. Solderable per MIL-STD-202, Method 208 | 1 |
CAD (land: KiCad; 3D: generated from the datasheet)
- Symbol:
DSS8110Y-7 - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363, generated on the KiCad land (body 1.3 x 2.1 mm, terminals on the pads, 1.0 mm tall, datasheet A, nominal). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
- 3D model files:
dss8110y-7-etched.step/dss8110y-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dss8110y-7.step/dss8110y-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
b00f650e3d2bdf39, retrieved 2026-11-13, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).