component
DSS5320T-7
Public Made by Adomby adom
Diodes Incorporated Bipolar Transistors - BJT, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
DSS5320T-7
Diodes Incorporated · Bipolar Transistors - BJT · SOT-23
DSS5320T-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the PNP transistor; the VEBO limit is -5 V and the continuous base current IB is -0.5 A. |
| 2 | E | passive | Emitter of the PNP transistor; the VEBO limit is -5 V. |
| 3 | C | passive | Collector of the PNP transistor; VCEO is -20 V and the continuous collector current IC is -2 A (ICM -5 A peak). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -20 | V | TA = 25°C | 2 | ||
| Collector-Emitter Voltage | VCEO | -20 | V | TA = 25°C | 2 | ||
| Emitter-Base Voltage | VEBO | -5 | V | TA = 25°C | 2 | ||
| Peak Pulse Current | ICM | -5 | A | TA = 25°C | 2 | ||
| Repetitive Peak Pulse Current | ICRP | -3 | A | TA = 25°C; pulse width ≤100ms, duty cycle ≤ 0.25 | 2 | ||
| Continuous Collector Current | IC | -2 | A | TA = 25°C | 2 | ||
| Base Current | IB | -0.5 | A | TA = 25°C | 2 | ||
| Power Dissipation | PD | 600 | mW | TA = 25°C, 15mm x 15mm x 1.6mm FR4 PCB, still air | 2 | ||
| Thermal Resistance, Junction to Ambient Air | RθJA | 209 | °C/W | TA = 25°C | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Collector-Base Cutoff Current | ICBO | -100 | nA | VCB = -20V, IE = 0 | 3 | ||
| Collector-Base Cutoff Current | ICBO | -50 | μA | VCB = -20V, IE = 0, TA = 150°C | 3 | ||
| Emitter-Base Cutoff Current | IEBO | -100 | nA | VEB = -5V, IC = 0 | 3 | ||
| Collector-Base Breakdown Voltage | BVCBO | -20 | V | IC = -100μA | 3 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | -20 | V | IC = -10mA | 3 | ||
| Emitter-Base Breakdown Voltage | BVEBO | -5 | V | IE = -100μA | 3 | ||
| DC Current Gain | hFE | 220 | VCE = -2V, IC = -0.1A | 3 | |||
| DC Current Gain | hFE | 200 | VCE = -2V, IC = -1A | 3 | |||
| DC Current Gain | hFE | 150 | VCE = -2V, IC = -2A | 3 | |||
| DC Current Gain | hFE | 100 | VCE = -2V, IC = -3A | 3 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -70 | mV | IC = -0.5A, IB = -50mA | 3 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -130 | mV | IC = -1A, IB = -50mA | 3 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -230 | mV | IC = -2A, IB = -100mA | 3 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -210 | mV | IC = -2A, IB = -200mA | 3 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -300 | mV | IC = -3A, IB = -300mA | 3 | ||
| Equivalent On-Resistance | RCE(sat) | 105 | mΩ | IE = -2A, IB = -200mA | 3 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -1.1 | V | IC = -2A, IB = -100mA | 3 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -1.2 | V | IC = -3A, IB = -300mA | 3 | ||
| Base-Emitter Turn-on Voltage | VBE(on) | -1.2 | V | VCE = -2V, IC = -1A | 3 | ||
| Transition Frequency | fT | 100 | 180 | MHz | VCE = -5V, IC = -100mA, f = 100MHz | 3 | |
| Output Capacitance | Cob | 25 | 50 | pF | VCB = -10V, f = 1MHz | 3 | |
| Turn-On Time | ton | 67 | ns | VCC = -10V, IC = -1A, IB1 = -IB2 = -50mA | 3 | ||
| Delay Time | td | 23 | ns | VCC = -10V, IC = -1A, IB1 = -IB2 = -50mA | 3 | ||
| Rise Time | tr | 44 | ns | VCC = -10V, IC = -1A, IB1 = -IB2 = -50mA | 3 | ||
| Turn-Off Time | toff | 224 | ns | VCC = -10V, IC = -1A, IB1 = -IB2 = -50mA | 3 | ||
| Storage Time | ts | 184 | ns | VCC = -10V, IC = -1A, IB1 = -IB2 = -50mA | 3 | ||
| Fall Time | tf | 40 | ns | VCC = -10V, IC = -1A, IB1 = -IB2 = -50mA | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | • Terminals: Finish, Matte Tin annealed over Copper leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DSS5320T-7 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
dss5320t-7-etched.step/dss5320t-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dss5320t-7.step/dss5320t-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (5 pp, sha256
0e6f154781782238, retrieved 2026-10-26, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).