component
DSS5160V-7
Public Made by Adomby adom
Diodes Incorporated Bipolar (BJT), SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DSS5160V-7
Diodes Incorporated · Bipolar (BJT) · SOT-563
DSS5160V-7 from Diodes Incorporated, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Collector, tied with pins 2, 5 and 6; rated VCEO -60 V, VCBO -80 V, continuous IC -1 A (peak -2 A). |
| 2 | C | passive | Collector, tied with pins 1, 5 and 6; rated VCEO -60 V, VCBO -80 V, continuous IC -1 A (peak -2 A). |
| 3 | B | passive | Base; continuous base current -300 mA (peak -1 A), VEBO -5 V. |
| 4 | E | passive | Emitter of the PNP transistor; emitter-base voltage limit -5 V. |
| 5 | C | passive | Collector, tied with pins 1, 2 and 6; rated VCEO -60 V, VCBO -80 V, continuous IC -1 A (peak -2 A). |
| 6 | C | passive | Collector, tied with pins 1, 2 and 5; rated VCEO -60 V, VCBO -80 V, continuous IC -1 A (peak -2 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-563 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | -80 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | -60 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 1 | |||
| Collector Current - Continuous | IC | -1 | A | 1 | |||
| Peak Pulse Collector Current | ICM | -2 | A | 1 | |||
| Base Current (DC) | IB | -300 | mA | 1 | |||
| Peak Base Current | IBM | -1 | A | 1 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Power Dissipation | PD | 600 | mW | @ TA = 25°C; Note 3: device mounted on FR-4 PCB with minimum recommended pad layout | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 208 | °C/W | @ TA = 25°C; Note 3: device mounted on FR-4 PCB with minimum recommended pad layout | 1 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | -80 | V | IC = -100μA, IE = 0 | 2 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -60 | V | IC = -10mA, IB = 0 | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | V | IE = -100μA, IC = 0 | 2 | ||
| Collector Cutoff Current | ICBO | -100 | nA | VCB = -60V, IE = 0 | 2 | ||
| Collector Cutoff Current | ICBO | -50 | μA | VCB = -60V, IE = 0, TA = 150°C | 2 | ||
| Emitter Cutoff Current | IEBO | -100 | nA | VEB = -5V, IC = 0 | 2 | ||
| DC Current Gain | hFE | 200 | VCE = -5V, IC = -1mA | 2 | |||
| DC Current Gain | hFE | 150 | VCE = -5V, IC = -500mA | 2 | |||
| DC Current Gain | hFE | 100 | VCE = -5V, IC = -1A | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(SAT) | -160 | mV | IC = -100mA, IB = -1mA | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | -175 | mV | IC = -500mA, IB = -50mA | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | -330 | mV | IC = -1A, IB = -100mA | 2 | ||
| Collector-Emitter Saturation Resistance | RCE(SAT) | 330 | mΩ | IC = -1A, IB = -100mA | 2 | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | -1.1 | V | IC = -1A, IB = -50mA | 2 | ||
| Base-Emitter Turn On Voltage | VBE(ON) | -0.9 | V | VCE = -5V, IC = -1A | 2 | ||
| Output Capacitance | Cobo | 15 | pF | VCB = -10V, f = 1.0MHz | 2 | ||
| Current Gain-Bandwidth Product | fT | 150 | MHz | VCE = -10V, IC = -50mA, f = 100MHz | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DSS5160V-7 - Footprint:
Package_TO_SOT_SMD:SOT-563 - 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files:
dss5160v-7-etched.step/dss5160v-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dss5160v-7.step/dss5160v-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (5 pp, sha256
d7e8531593aa1c28, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DSS5160V-7
**Diodes Incorporated** · Bipolar (BJT) · SOT-563
DSS5160V-7 from Diodes Incorporated, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Collector, tied with pins 2, 5 and 6; rated VCEO -60 V, VCBO -80 V, continuous IC -1 A (peak -2 A). |
| 2 | C | passive | Collector, tied with pins 1, 5 and 6; rated VCEO -60 V, VCBO -80 V, continuous IC -1 A (peak -2 A). |
| 3 | B | passive | Base; continuous base current -300 mA (peak -1 A), VEBO -5 V. |
| 4 | E | passive | Emitter of the PNP transistor; emitter-base voltage limit -5 V. |
| 5 | C | passive | Collector, tied with pins 1, 2 and 6; rated VCEO -60 V, VCBO -80 V, continuous IC -1 A (peak -2 A). |
| 6 | C | passive | Collector, tied with pins 1, 2 and 5; rated VCEO -60 V, VCBO -80 V, continuous IC -1 A (peak -2 A). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-563 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | | | -80 | V | | 1 |
| Collector-Emitter Voltage | VCEO | | | -60 | V | | 1 |
| Emitter-Base Voltage | VEBO | | | -5 | V | | 1 |
| Collector Current - Continuous | IC | | | -1 | A | | 1 |
| Peak Pulse Collector Current | ICM | | | -2 | A | | 1 |
| Base Current (DC) | IB | | | -300 | mA | | 1 |
| Peak Base Current | IBM | | | -1 | A | | 1 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Power Dissipation | PD | | | 600 | mW | @ TA = 25°C; Note 3: device mounted on FR-4 PCB with minimum recommended pad layout | 1 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 208 | °C/W | @ TA = 25°C; Note 3: device mounted on FR-4 PCB with minimum recommended pad layout | 1 |
| Collector-Base Breakdown Voltage | V(BR)CBO | -80 | | | V | IC = -100μA, IE = 0 | 2 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -60 | | | V | IC = -10mA, IB = 0 | 2 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | -5 | | | V | IE = -100μA, IC = 0 | 2 |
| Collector Cutoff Current | ICBO | | | -100 | nA | VCB = -60V, IE = 0 | 2 |
| Collector Cutoff Current | ICBO | | | -50 | μA | VCB = -60V, IE = 0, TA = 150°C | 2 |
| Emitter Cutoff Current | IEBO | | | -100 | nA | VEB = -5V, IC = 0 | 2 |
| DC Current Gain | hFE | 200 | | | | VCE = -5V, IC = -1mA | 2 |
| DC Current Gain | hFE | 150 | | | | VCE = -5V, IC = -500mA | 2 |
| DC Current Gain | hFE | 100 | | | | VCE = -5V, IC = -1A | 2 |
| Collector-Emitter Saturation Voltage | VCE(SAT) | | | -160 | mV | IC = -100mA, IB = -1mA | 2 |
| Collector-Emitter Saturation Voltage | VCE(SAT) | | | -175 | mV | IC = -500mA, IB = -50mA | 2 |
| Collector-Emitter Saturation Voltage | VCE(SAT) | | | -330 | mV | IC = -1A, IB = -100mA | 2 |
| Collector-Emitter Saturation Resistance | RCE(SAT) | | | 330 | mΩ | IC = -1A, IB = -100mA | 2 |
| Base-Emitter Saturation Voltage | VBE(SAT) | | | -1.1 | V | IC = -1A, IB = -50mA | 2 |
| Base-Emitter Turn On Voltage | VBE(ON) | | | -0.9 | V | VCE = -5V, IC = -1A | 2 |
| Output Capacitance | Cobo | | | 15 | pF | VCB = -10V, f = 1.0MHz | 2 |
| Current Gain-Bandwidth Product | fT | 150 | | | MHz | VCE = -10V, IC = -50mA, f = 100MHz | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. | 1 |
## CAD (KiCad official)
- Symbol: `DSS5160V-7`
- Footprint: `Package_TO_SOT_SMD:SOT-563`
- 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files: `dss5160v-7-etched.step` / `dss5160v-7-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dss5160v-7.step` / `dss5160v-7.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588912308437864448) (5 pp, sha256 `d7e8531593aa1c28`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dss5160v-7-datasheet.pdf)