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DSS5160T-7

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Diodes Incorporated Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DSS5160T-7

Diodes Incorporated · Bipolar (BJT) · SOT-23

DSS5160T-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal of the PNP transistor; DC base current is rated at -300 mA with a peak base current of -1 A.
2 E passive Emitter terminal of the PNP transistor; emitter-base voltage is rated at -5 V maximum.
3 C passive Collector terminal of the PNP transistor; rated at -60 V VCEO, -80 V VCBO, -1 A continuous and -2 A peak collector current.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO -80 V 2
Collector-Emitter Voltage VCEO -60 V 2
Emitter-Base Voltage VEBO -5 V 2
Continuous Collector Current IC -1 A 2
Peak Pulse Collector Current ICM -2 A 2
Base Current (DC) IB -300 mA 2
Peak Base Current IBM -1 A 2
Power Dissipation PD 725 mW Note 5: 15mm x 15mm x1.6mm FR4 PCB, 1oz copper, still air 2
Thermal Resistance, Junction to Ambient RθJA 172 °C/W Note 5: 15mm x 15mm x1.6mm FR4 PCB, 1oz copper, still air 2
Thermal Resistance, Junction to Ambient Air RθJA 79 °C/W Note 4: pulse width ≤100ms, duty cycle ≤0.25 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Collector-Base Breakdown Voltage BVCBO -80 V IC = -100μA 3
Collector-Emitter Breakdown Voltage BVCEO -60 V IC = -10mA 3
Emitter-Base Breakdown Voltage BVEBO -5 V IE = -100μA 3
Collector-Base Cutoff Current ICBO -100 nA VCB = -20V, IE = 0 3
Collector-Base Cutoff Current ICBO -50 μA VCB = -20V, IE = 0, TA = 150°C 3
Emitter-Base Cutoff Current IEBO -100 nA VEB = -5V, IC = 0 3
DC Current Gain hFE 200 VCE = -5V, IC = -1mA 3
DC Current Gain hFE 150 VCE = -5V, IC = -500mA 3
DC Current Gain hFE 100 VCE = -5V, IC = -1A 3
Collector-Emitter Saturation Voltage VCE(sat) -175 mV IC = -100mA, IB = -1mA 3
Collector-Emitter Saturation Voltage VCE(sat) -180 mV IC = -500mA, IB = -50mA 3
Collector-Emitter Saturation Voltage VCE(sat) -340 mV IC = -1A, IB = -100mA 3
Equivalent On-Resistance RCE(sat) 340 mΩ IE = -1A, IB = -100mA 3
Base-Emitter Saturation Voltage VBE(sat) -1.1 V IC = -1A, IB = -50mA 3
Base-Emitter Turn-on Voltage VBE(on) -0.9 V VCE = -5V, IC = -1A 3
Transition Frequency fT 150 MHz VCE = -10V, IC = -50mA, f = 100MHz 3
Output Capacitance Cob 15 pF VCB = -10V, f = 1MHz 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin • Terminals: Finish, Matte Tin annealed over Copper leadframe. 1

CAD (KiCad official)

  • Symbol: DSS5160T-7
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: dss5160t-7-etched.step / dss5160t-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dss5160t-7.step / dss5160t-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 a95d26ec39d1d112, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF