component
DSS4220V-7
Public Made by Adomby adom
Diodes Incorporated Bipolar Transistors - BJT, SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
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Publish 0.1.0
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DSS4220V-7
Diodes Incorporated · Bipolar Transistors - BJT · SOT-563
DSS4220V-7 from Diodes Incorporated, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Collector terminal; pins 1, 2, 5 and 6 are the collector connection, rated VCBO 20 V and VCEO 20 V with 2 A continuous and 4 A peak collector current. |
| 2 | C | passive | Collector terminal; one of the four collector pins (1, 2, 5, 6), rated VCEO 20 V with 2 A continuous and 4 A peak collector current. |
| 3 | B | input | Base terminal; the datasheet limits base current to 0.3 A DC and 0.6 A peak (IBM). |
| 4 | E | passive | Emitter terminal; emitter-base breakdown is rated VEBO 5 V. |
| 5 | C | passive | Collector terminal; one of the four collector pins (1, 2, 5, 6), rated VCEO 20 V with 2 A continuous and 4 A peak collector current. |
| 6 | C | passive | Collector terminal; one of the four collector pins (1, 2, 5, 6), rated VCEO 20 V with 2 A continuous and 4 A peak collector current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-563 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | V(BR)CBO | 20 | V | IC = 100μA, IE = 0 | 2 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 20 | V | IC = 10mA, IB = 0 | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | V | IE = 100μA, IC = 0 | 2 | ||
| Collector Cutoff Current | ICBO | 100 | nA | VCB = 20V, IE = 0 | 2 | ||
| Collector Cutoff Current | ICBO | 50 | μA | VCB = 20V, IE = 0, TA = 150°C | 2 | ||
| Emitter Cutoff Current | IEBO | 100 | nA | VEB = 5V, IC = 0 | 2 | ||
| DC Current Gain | hFE | 220 | VCE = 2V, IC = 1mA | 2 | |||
| DC Current Gain | hFE | 200 | VCE = 2V, IC = 1A | 2 | |||
| DC Current Gain | hFE | 120 | VCE = 2V, IC = 2A | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 55 | mV | IC = 100mA, IB = 1mA | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 95 | mV | IC = 500mA, IB = 50mA | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 180 | mV | IC = 1A, IB = 50mA | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 175 | mV | IC = 1A, IB = 100mA | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 355 | mV | IC = 2A, IB = 100mA | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 350 | mV | IC = 2A, IB = 200mA | 2 | ||
| Collector-Emitter Saturation Resistance | RCE(SAT) | 175 | mΩ | IC = 1A, IB = 100mA | 2 | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | 1.1 | V | IC = 1A, IB = 50mA | 2 | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | 1.2 | V | IC = 1A, IB = 100mA | 2 | ||
| Base-Emitter Turn On Voltage | VBE(ON) | 1.1 | V | VCE = 5V, IC = 1A | 2 | ||
| Collector-Base Voltage | VCBO | 20 | V | TA = 25°C | 1 | ||
| Collector-Emitter Voltage | VCEO | 20 | V | TA = 25°C | 1 | ||
| Emitter-Base Voltage | VEBO | 5 | V | TA = 25°C | 1 | ||
| Collector Current - Continuous | IC | 2 | A | TA = 25°C | 1 | ||
| Peak Pulse Collector Current | ICM | 4 | A | TA = 25°C | 1 | ||
| Base Current (DC) | IB | 0.3 | A | TA = 25°C | 1 | ||
| Peak Base Current | IBM | 0.6 | A | TA = 25°C | 1 | ||
| Power Dissipation | PD | 600 | mW | Note 3, TA = 25°C | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 208 | °C/W | Note 3, TA = 25°C | 1 | ||
| Output Capacitance | Cobo | 16 | pF | VCB = 10V, f = 1.0MHz | 2 | ||
| Current Gain-Bandwidth Product | fT | 260 | MHz | VCE = 10V, IC = 50mA, f = 100MHz | 2 | ||
| Turn-On Time | ton | 60 | ns | VCC = 10V, IC = 1A, IB1 = IB2 = 50mA | 2 | ||
| Delay Time | td | 20 | ns | VCC = 10V, IC = 1A, IB1 = IB2 = 50mA | 2 | ||
| Rise Time | tr | 40 | ns | VCC = 10V, IC = 1A, IB1 = IB2 = 50mA | 2 | ||
| Turn-Off Time | toff | 225 | ns | VCC = 10V, IC = 1A, IB1 = IB2 = 50mA | 2 | ||
| Storage Time | ts | 205 | ns | VCC = 10V, IC = 1A, IB1 = IB2 = 50mA | 2 | ||
| Fall Time | tf | 20 | ns | VCC = 10V, IC = 1A, IB1 = IB2 = 50mA | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DSS4220V-7 - Footprint:
Package_TO_SOT_SMD:SOT-563 - 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files:
dss4220v-7-etched.step/dss4220v-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dss4220v-7.step/dss4220v-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (5 pp, sha256
8033411b19b978e7, retrieved 2026-11-13, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DSS4220V-7
**Diodes Incorporated** · Bipolar Transistors - BJT · SOT-563
DSS4220V-7 from Diodes Incorporated, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Collector terminal; pins 1, 2, 5 and 6 are the collector connection, rated VCBO 20 V and VCEO 20 V with 2 A continuous and 4 A peak collector current. |
| 2 | C | passive | Collector terminal; one of the four collector pins (1, 2, 5, 6), rated VCEO 20 V with 2 A continuous and 4 A peak collector current. |
| 3 | B | input | Base terminal; the datasheet limits base current to 0.3 A DC and 0.6 A peak (IBM). |
| 4 | E | passive | Emitter terminal; emitter-base breakdown is rated VEBO 5 V. |
| 5 | C | passive | Collector terminal; one of the four collector pins (1, 2, 5, 6), rated VCEO 20 V with 2 A continuous and 4 A peak collector current. |
| 6 | C | passive | Collector terminal; one of the four collector pins (1, 2, 5, 6), rated VCEO 20 V with 2 A continuous and 4 A peak collector current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-563 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | V(BR)CBO | 20 | | | V | IC = 100μA, IE = 0 | 2 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 20 | | | V | IC = 10mA, IB = 0 | 2 |
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | | | V | IE = 100μA, IC = 0 | 2 |
| Collector Cutoff Current | ICBO | | | 100 | nA | VCB = 20V, IE = 0 | 2 |
| Collector Cutoff Current | ICBO | | | 50 | μA | VCB = 20V, IE = 0, TA = 150°C | 2 |
| Emitter Cutoff Current | IEBO | | | 100 | nA | VEB = 5V, IC = 0 | 2 |
| DC Current Gain | hFE | 220 | | | | VCE = 2V, IC = 1mA | 2 |
| DC Current Gain | hFE | 200 | | | | VCE = 2V, IC = 1A | 2 |
| DC Current Gain | hFE | 120 | | | | VCE = 2V, IC = 2A | 2 |
| Collector-Emitter Saturation Voltage | VCE(SAT) | | | 55 | mV | IC = 100mA, IB = 1mA | 2 |
| Collector-Emitter Saturation Voltage | VCE(SAT) | | | 95 | mV | IC = 500mA, IB = 50mA | 2 |
| Collector-Emitter Saturation Voltage | VCE(SAT) | | | 180 | mV | IC = 1A, IB = 50mA | 2 |
| Collector-Emitter Saturation Voltage | VCE(SAT) | | | 175 | mV | IC = 1A, IB = 100mA | 2 |
| Collector-Emitter Saturation Voltage | VCE(SAT) | | | 355 | mV | IC = 2A, IB = 100mA | 2 |
| Collector-Emitter Saturation Voltage | VCE(SAT) | | | 350 | mV | IC = 2A, IB = 200mA | 2 |
| Collector-Emitter Saturation Resistance | RCE(SAT) | | | 175 | mΩ | IC = 1A, IB = 100mA | 2 |
| Base-Emitter Saturation Voltage | VBE(SAT) | | | 1.1 | V | IC = 1A, IB = 50mA | 2 |
| Base-Emitter Saturation Voltage | VBE(SAT) | | | 1.2 | V | IC = 1A, IB = 100mA | 2 |
| Base-Emitter Turn On Voltage | VBE(ON) | | | 1.1 | V | VCE = 5V, IC = 1A | 2 |
| Collector-Base Voltage | VCBO | | | 20 | V | TA = 25°C | 1 |
| Collector-Emitter Voltage | VCEO | | | 20 | V | TA = 25°C | 1 |
| Emitter-Base Voltage | VEBO | | | 5 | V | TA = 25°C | 1 |
| Collector Current - Continuous | IC | | | 2 | A | TA = 25°C | 1 |
| Peak Pulse Collector Current | ICM | | | 4 | A | TA = 25°C | 1 |
| Base Current (DC) | IB | | | 0.3 | A | TA = 25°C | 1 |
| Peak Base Current | IBM | | | 0.6 | A | TA = 25°C | 1 |
| Power Dissipation | PD | | | 600 | mW | Note 3, TA = 25°C | 1 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Thermal Resistance, Junction to Ambient | RθJA | | 208 | | °C/W | Note 3, TA = 25°C | 1 |
| Output Capacitance | Cobo | | 16 | | pF | VCB = 10V, f = 1.0MHz | 2 |
| Current Gain-Bandwidth Product | fT | | 260 | | MHz | VCE = 10V, IC = 50mA, f = 100MHz | 2 |
| Turn-On Time | ton | | 60 | | ns | VCC = 10V, IC = 1A, IB1 = IB2 = 50mA | 2 |
| Delay Time | td | | 20 | | ns | VCC = 10V, IC = 1A, IB1 = IB2 = 50mA | 2 |
| Rise Time | tr | | 40 | | ns | VCC = 10V, IC = 1A, IB1 = IB2 = 50mA | 2 |
| Turn-Off Time | toff | | 225 | | ns | VCC = 10V, IC = 1A, IB1 = IB2 = 50mA | 2 |
| Storage Time | ts | | 205 | | ns | VCC = 10V, IC = 1A, IB1 = IB2 = 50mA | 2 |
| Fall Time | tf | | 20 | | ns | VCC = 10V, IC = 1A, IB1 = IB2 = 50mA | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. | 1 |
## CAD (KiCad official)
- Symbol: `DSS4220V-7`
- Footprint: `Package_TO_SOT_SMD:SOT-563`
- 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files: `dss4220v-7-etched.step` / `dss4220v-7-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dss4220v-7.step` / `dss4220v-7.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://www.diodes.com/assets/Datasheets/DSS4220V-7.pdf) (5 pp, sha256 `8033411b19b978e7`, retrieved 2026-11-13, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dss4220v-7-datasheet.pdf)