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DSS4220V-7

Diodes Incorporated · Bipolar Transistors - BJT · SOT-563

DSS4220V-7 from Diodes Incorporated, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 C passive Collector terminal; pins 1, 2, 5 and 6 are the collector connection, rated VCBO 20 V and VCEO 20 V with 2 A continuous and 4 A peak collector current.
2 C passive Collector terminal; one of the four collector pins (1, 2, 5, 6), rated VCEO 20 V with 2 A continuous and 4 A peak collector current.
3 B input Base terminal; the datasheet limits base current to 0.3 A DC and 0.6 A peak (IBM).
4 E passive Emitter terminal; emitter-base breakdown is rated VEBO 5 V.
5 C passive Collector terminal; one of the four collector pins (1, 2, 5, 6), rated VCEO 20 V with 2 A continuous and 4 A peak collector current.
6 C passive Collector terminal; one of the four collector pins (1, 2, 5, 6), rated VCEO 20 V with 2 A continuous and 4 A peak collector current.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-563
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage V(BR)CBO 20 V IC = 100μA, IE = 0 2
Collector-Emitter Breakdown Voltage V(BR)CEO 20 V IC = 10mA, IB = 0 2
Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE = 100μA, IC = 0 2
Collector Cutoff Current ICBO 100 nA VCB = 20V, IE = 0 2
Collector Cutoff Current ICBO 50 μA VCB = 20V, IE = 0, TA = 150°C 2
Emitter Cutoff Current IEBO 100 nA VEB = 5V, IC = 0 2
DC Current Gain hFE 220 VCE = 2V, IC = 1mA 2
DC Current Gain hFE 200 VCE = 2V, IC = 1A 2
DC Current Gain hFE 120 VCE = 2V, IC = 2A 2
Collector-Emitter Saturation Voltage VCE(SAT) 55 mV IC = 100mA, IB = 1mA 2
Collector-Emitter Saturation Voltage VCE(SAT) 95 mV IC = 500mA, IB = 50mA 2
Collector-Emitter Saturation Voltage VCE(SAT) 180 mV IC = 1A, IB = 50mA 2
Collector-Emitter Saturation Voltage VCE(SAT) 175 mV IC = 1A, IB = 100mA 2
Collector-Emitter Saturation Voltage VCE(SAT) 355 mV IC = 2A, IB = 100mA 2
Collector-Emitter Saturation Voltage VCE(SAT) 350 mV IC = 2A, IB = 200mA 2
Collector-Emitter Saturation Resistance RCE(SAT) 175 mΩ IC = 1A, IB = 100mA 2
Base-Emitter Saturation Voltage VBE(SAT) 1.1 V IC = 1A, IB = 50mA 2
Base-Emitter Saturation Voltage VBE(SAT) 1.2 V IC = 1A, IB = 100mA 2
Base-Emitter Turn On Voltage VBE(ON) 1.1 V VCE = 5V, IC = 1A 2
Collector-Base Voltage VCBO 20 V TA = 25°C 1
Collector-Emitter Voltage VCEO 20 V TA = 25°C 1
Emitter-Base Voltage VEBO 5 V TA = 25°C 1
Collector Current - Continuous IC 2 A TA = 25°C 1
Peak Pulse Collector Current ICM 4 A TA = 25°C 1
Base Current (DC) IB 0.3 A TA = 25°C 1
Peak Base Current IBM 0.6 A TA = 25°C 1
Power Dissipation PD 600 mW Note 3, TA = 25°C 1
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 1
Thermal Resistance, Junction to Ambient RθJA 208 °C/W Note 3, TA = 25°C 1
Output Capacitance Cobo 16 pF VCB = 10V, f = 1.0MHz 2
Current Gain-Bandwidth Product fT 260 MHz VCE = 10V, IC = 50mA, f = 100MHz 2
Turn-On Time ton 60 ns VCC = 10V, IC = 1A, IB1 = IB2 = 50mA 2
Delay Time td 20 ns VCC = 10V, IC = 1A, IB1 = IB2 = 50mA 2
Rise Time tr 40 ns VCC = 10V, IC = 1A, IB1 = IB2 = 50mA 2
Turn-Off Time toff 225 ns VCC = 10V, IC = 1A, IB1 = IB2 = 50mA 2
Storage Time ts 205 ns VCC = 10V, IC = 1A, IB1 = IB2 = 50mA 2
Fall Time tf 20 ns VCC = 10V, IC = 1A, IB1 = IB2 = 50mA 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. 1

CAD (KiCad official)

  • Symbol: DSS4220V-7
  • Footprint: Package_TO_SOT_SMD:SOT-563
  • 3D model: SOT-563 (KiCad packages3D, STEP)
  • 3D model files: dss4220v-7-etched.step / dss4220v-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dss4220v-7.step / dss4220v-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (5 pp, sha256 8033411b19b978e7, retrieved 2026-11-13, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF