# DSS4160TQ-7-HXY

**HXY MOSFET** · Bipolar (BJT) · SOT-23

DSS4160TQ-7-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base; emitter-base voltage limited to 5 V max (VEBO) and drives the NPN transistor. |
| 2 | E | passive | Emitter of the NPN transistor; collector current rated 1 A continuous and 2 A peak pulse. |
| 3 | C | passive | Collector of the NPN transistor; VCEO 60 V, VCBO 80 V, IC 1 A continuous, ICM 2 A peak. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 80 |  |  | V | IC=100µA, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 60 |  |  | V | IC=10mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 5 |  |  | V | IE=100µA, IC=0 | 1 |
| Collector cut-off current | ICBO |  |  | 100 | nA | VCB=60V, IE=0 | 1 |
| Emitter cut-off current | IEBO |  |  | 100 | nA | VEB=4V, IC=0 | 1 |
| DC current gain(1) | hFE(1) | 100 |  |  |  | VCE=5V, IC=1mA | 1 |
| DC current gain(2) | hFE(2) | 100 |  | 300 |  | VCE=5V, IC=500mA | 1 |
| DC current gain(3) | hFE(3) | 80 |  |  |  | VCE=5V, IC=1A | 1 |
| DC current gain(4) | hFE(4) | 30 |  |  |  | VCE=5V, IC=2A | 1 |
| Collector-emitter saturation voltage | VCE(sat)1 |  |  | 0.25 | V | IC=500mA, IB=50mA | 1 |
| Collector-emitter saturation voltage | VCE(sat)2 |  |  | 0.5 | V | IC=1A, IB=100mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | 1.1 | V | IC=1A, IB=100mA | 1 |
| Base-emitter voltage | VBE |  |  | 1 | V | VCE=5V, IC=1A | 1 |
| Collector output capacitance | Cob |  |  | 10 | pF | VCB=10V,f=1MHz | 1 |
| Collector Current | IC |  |  | 1 | A |  | 1 |
| Collector-Base Voltage | VCBO |  |  | 80 | V |  | 1 |
| Collector-Emitter Voltage | VCEO |  |  | 60 | V |  | 1 |
| Emitter-Base Voltage | VEBO |  |  | 5 | V |  | 1 |
| Peak Pulse Current | ICM |  |  | 2 | A |  | 1 |
| Collector Power Dissipation | PC |  |  | 250 | mW |  | 1 |
| Operation Junction And Storage Temperature Range | TJ ,Tstg | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance From Junction To Ambient | RθJA |  |  | 500 | °C/W |  | 1 |
| Transition frequency | fT |  | 150 |  | MHz | VCE=10V, IC=50mA, f=100MHz | 1 |

## CAD (KiCad official)

- Symbol: `DSS4160TQ-7-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `dss4160tq-7-hxy-etched.step` / `dss4160tq-7-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dss4160tq-7-hxy.step` / `dss4160tq-7-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604450143622082560) (4 pp, sha256 `552ac0c666db6b89`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dss4160tq-7-hxy-datasheet.pdf)