component
DSS4140V-7
Public Made by Adomby adom
Diodes Incorporated Bipolar (BJT), SOT-563. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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DSS4140V-7
Diodes Incorporated · Bipolar (BJT) · SOT-563
DSS4140V-7 from Diodes Incorporated, in a SOT-563. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Collector terminal (grouped with pins 2, 5 and 6 in the pin-out drawing); rated 40 V VCEO and 1 A continuous collector current. |
| 2 | C | passive | Collector terminal (grouped with pins 1, 5 and 6 in the pin-out drawing); rated 40 V VCEO and 1 A continuous collector current. |
| 3 | B | input | Base terminal; base current is rated at 300 mA DC and 1 A peak (inferred from the pin-out drawing, not labelled explicitly in the extracted text). |
| 4 | E | passive | Emitter terminal; emitter-base voltage is rated at 5 V VEBO (inferred from the pin-out drawing, not labelled explicitly in the extracted text). |
| 5 | C | passive | Collector terminal (grouped with pins 1, 2 and 6 in the pin-out drawing); rated 40 V VCEO and 1 A continuous collector current. |
| 6 | C | passive | Collector terminal (grouped with pins 1, 2 and 5 in the pin-out drawing); rated 40 V VCEO and 1 A continuous collector current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-563 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 40 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | 40 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 5 | V | 1 | |||
| Collector Current - Continuous | IC | 1 | A | 1 | |||
| Repetitive Peak Collector Current | ICRP | 2 | A | Note 3: pulse width ≤ 30ms; duty cycle ≤ 0.2 | 1 | ||
| Peak Pulse Collector Current | ICM | 3 | A | 1 | |||
| Base Current (DC) | IB | 300 | mA | 1 | |||
| Peak Base Current | IBM | 1 | A | 1 | |||
| Power Dissipation | PD | 600 | mW | @ TA = 25°C; Note 4: device mounted on FR-4 PCB with minimum recommended pad layout | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 208 | °C/W | @ TA = 25°C; Note 4: device mounted on FR-4 PCB with minimum recommended pad layout | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Collector-Base Breakdown Voltage | V(BR)CBO | 40 | V | IC = 100μA, IE = 0 | 2 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 40 | V | IC = 10mA, IB = 0 | 2 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 5 | V | IE = 100μA, IC = 0 | 2 | ||
| Collector Cutoff Current | ICBO | 100 | nA | VCB = 40V, IE = 0 | 2 | ||
| Collector Cutoff Current | ICBO | 50 | μA | VCB = 40V, IE = 0, TA = 150°C | 2 | ||
| Emitter Cutoff Current | IEBO | 100 | nA | VEB = 5V, IC = 0 | 2 | ||
| DC Current Gain | hFE | 300 | VCE = 5V, IC = 1mA | 2 | |||
| DC Current Gain | hFE | 200 | VCE = 5V, IC = 1A | 2 | |||
| DC Current Gain | hFE | 75 | VCE = 5V, IC = 2A | 2 | |||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 80 | mV | IC = 100mA, IB = 1mA | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 110 | mV | IC = 500mA, IB = 50mA | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 190 | mV | IC = 1A, IB = 100mA | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 440 | mV | IC = 2A, IB = 200mA | 2 | ||
| Collector-Emitter Saturation Resistance | RCE(SAT) | 190 | mΩ | IC = 1A, IB = 100mA | 2 | ||
| Base-Emitter Saturation Voltage | VBE(SAT) | 1.2 | V | IC = 1A, IB = 100mA | 2 | ||
| Base-Emitter Turn On Voltage | VBE(ON) | 1.1 | V | VCE = 5V, IC = 1A | 2 | ||
| Output Capacitance | Cobo | 10 | pF | VCB = 10V, f = 1.0MHz | 2 | ||
| Current Gain-Bandwidth Product | fT | 150 | MHz | VCE = 10V, IC = 50mA, f = 100MHz | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | • Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DSS4140V-7 - Footprint:
Package_TO_SOT_SMD:SOT-563 - 3D model: SOT-563 (KiCad packages3D, STEP)
- 3D model files:
dss4140v-7-etched.step/dss4140v-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dss4140v-7.step/dss4140v-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (5 pp, sha256
d8952ea1bb6471bd, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).